Performance of amorphous and microcrystalline silicon pin solar cells under variable light intensity

M. Nath; S. Chakraborty; K. H. Kim; E. V. Johnson; P. Roca I Cabarrocas; P. Chatterjee

doi:10.1002/pssc.200982726

Performance of amorphous and microcrystalline silicon pin solar cells under variable light intensity

M. Nath
, S. Chakraborty
, K. H. Kim
, E. V. Johnson
, P. Roca I Cabarrocas
, P. Chatterjee

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have studied the solar cell behaviour under variable light intensity (VLI) of a standard a-Si:H pin solar cell with a wide band gap a-SiC:H emitter layer, and microcrystalline (μc)-Si:H solar cells of different degrees of crystallinity, using experiments in conjunction with detailed electrical-optical modelling. Both experiments and modelling reveal that whereas the fill factor (FF) of the a-Si:H pin cell decreases with increasing light intensity, starting from a low applied light bias, that of the μc-Si:H cells increases with light intensity over a major part of this range. This fact enables one to attain the maximum of the open-circuit voltage - fill factor product (V_oc x FF) at 1 to 2 suns intensity for the latter case; however this is not achieved for the a-Si:H cell. Using modelling we try to understand this difference in behaviour of the FF under VLI for the two types of cells. We also predict under what conditions it would be possible to shift the (V_oc x FF) _max for the a-Si:H cell towards one sun intensity.

Original language	English
Pages (from-to)	1105-1108
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	7
Issue number	3-4
DOIs	https://doi.org/10.1002/pssc.200982726
Publication status	Published - 27 May 2010
Event	23rd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS23 - Utrecht, Netherlands Duration: 23 Aug 2009 → 28 Aug 2009

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title = "Performance of amorphous and microcrystalline silicon pin solar cells under variable light intensity",

abstract = "We have studied the solar cell behaviour under variable light intensity (VLI) of a standard a-Si:H pin solar cell with a wide band gap a-SiC:H emitter layer, and microcrystalline (μc)-Si:H solar cells of different degrees of crystallinity, using experiments in conjunction with detailed electrical-optical modelling. Both experiments and modelling reveal that whereas the fill factor (FF) of the a-Si:H pin cell decreases with increasing light intensity, starting from a low applied light bias, that of the μc-Si:H cells increases with light intensity over a major part of this range. This fact enables one to attain the maximum of the open-circuit voltage - fill factor product (Voc x FF) at 1 to 2 suns intensity for the latter case; however this is not achieved for the a-Si:H cell. Using modelling we try to understand this difference in behaviour of the FF under VLI for the two types of cells. We also predict under what conditions it would be possible to shift the (Voc x FF) max for the a-Si:H cell towards one sun intensity.",

author = "M. Nath and S. Chakraborty and Kim, \{K. H.\} and Johnson, \{E. V.\} and \{Roca I Cabarrocas\}, P. and P. Chatterjee",

year = "2010",

month = may,

day = "27",

doi = "10.1002/pssc.200982726",

language = "English",

volume = "7",

pages = "1105--1108",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

number = "3-4",

note = "23rd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS23 ; Conference date: 23-08-2009 Through 28-08-2009",

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TY - JOUR

T1 - Performance of amorphous and microcrystalline silicon pin solar cells under variable light intensity

AU - Nath, M.

AU - Chakraborty, S.

AU - Kim, K. H.

AU - Johnson, E. V.

AU - Roca I Cabarrocas, P.

AU - Chatterjee, P.

PY - 2010/5/27

Y1 - 2010/5/27

N2 - We have studied the solar cell behaviour under variable light intensity (VLI) of a standard a-Si:H pin solar cell with a wide band gap a-SiC:H emitter layer, and microcrystalline (μc)-Si:H solar cells of different degrees of crystallinity, using experiments in conjunction with detailed electrical-optical modelling. Both experiments and modelling reveal that whereas the fill factor (FF) of the a-Si:H pin cell decreases with increasing light intensity, starting from a low applied light bias, that of the μc-Si:H cells increases with light intensity over a major part of this range. This fact enables one to attain the maximum of the open-circuit voltage - fill factor product (Voc x FF) at 1 to 2 suns intensity for the latter case; however this is not achieved for the a-Si:H cell. Using modelling we try to understand this difference in behaviour of the FF under VLI for the two types of cells. We also predict under what conditions it would be possible to shift the (Voc x FF) max for the a-Si:H cell towards one sun intensity.

AB - We have studied the solar cell behaviour under variable light intensity (VLI) of a standard a-Si:H pin solar cell with a wide band gap a-SiC:H emitter layer, and microcrystalline (μc)-Si:H solar cells of different degrees of crystallinity, using experiments in conjunction with detailed electrical-optical modelling. Both experiments and modelling reveal that whereas the fill factor (FF) of the a-Si:H pin cell decreases with increasing light intensity, starting from a low applied light bias, that of the μc-Si:H cells increases with light intensity over a major part of this range. This fact enables one to attain the maximum of the open-circuit voltage - fill factor product (Voc x FF) at 1 to 2 suns intensity for the latter case; however this is not achieved for the a-Si:H cell. Using modelling we try to understand this difference in behaviour of the FF under VLI for the two types of cells. We also predict under what conditions it would be possible to shift the (Voc x FF) max for the a-Si:H cell towards one sun intensity.

U2 - 10.1002/pssc.200982726

DO - 10.1002/pssc.200982726

M3 - Conference article

AN - SCOPUS:77952578381

SN - 1862-6351

VL - 7

SP - 1105

EP - 1108

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 3-4

T2 - 23rd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS23

Y2 - 23 August 2009 through 28 August 2009

ER -

Performance of amorphous and microcrystalline silicon pin solar cells under variable light intensity

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