Permeation barrier performance of Hot Wire-CVD grown silicon-nitride films treated by argon plasma

S. Majee; M. F. Cerqueira; D. Tondelier; J. C. Vanel; B. Geffroy; Y. Bonnassieux; P. Alpuim; J. E. Bourée

doi:10.1016/j.tsf.2014.10.009

Permeation barrier performance of Hot Wire-CVD grown silicon-nitride films treated by argon plasma

S. Majee
, M. F. Cerqueira
, D. Tondelier
, J. C. Vanel
, B. Geffroy
, Y. Bonnassieux
, P. Alpuim
, J. E. Bourée

Institut polytechnique de Paris
Universidade de Minho
Institut Pierre Simon Laplace, CNRS and CEA
INL – International Iberian Nanotechnology Laboratory

Research output: Contribution to journal › Article › peer-review

Abstract

In this work SiN_x thin films have been deposited by Hot-Wire Chemical Vapor Deposition (HW-CVD) technique to be used as encapsulation barriers for flexible organic electronic devices fabricated on polyethylene terephthalate (PET) substrates. First results of SiN_x multilayers stacked and stacks of SiN_x single-layers (50 nm each) separated by an Ar-plasma surface treatment are reported. The encapsulation barrier properties of these different multilayers are assessed using the electrical calcium degradation test by monitoring changes in the electrical conductance of encapsulated Ca sensors with time. The water vapor transmission rate is found to be slightly minimized (7 × 10^-3 g/m²day) for stacked SiN_x single-layers exposed to argon plasma treatment during a short time (2 min) as compared to that for stacked SiN_x single-layers without Ar plasma treatment.

Original language	English
Pages (from-to)	72-75
Number of pages	4
Journal	Thin Solid Films
Volume	575
DOIs	https://doi.org/10.1016/j.tsf.2014.10.009
Publication status	Published - 30 Jan 2015

Keywords

Ar-plasma treatment
HW-CVD
Permeation barrier
Silicon nitride

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10.1016/j.tsf.2014.10.009

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title = "Permeation barrier performance of Hot Wire-CVD grown silicon-nitride films treated by argon plasma",

abstract = "In this work SiNx thin films have been deposited by Hot-Wire Chemical Vapor Deposition (HW-CVD) technique to be used as encapsulation barriers for flexible organic electronic devices fabricated on polyethylene terephthalate (PET) substrates. First results of SiNx multilayers stacked and stacks of SiNx single-layers (50 nm each) separated by an Ar-plasma surface treatment are reported. The encapsulation barrier properties of these different multilayers are assessed using the electrical calcium degradation test by monitoring changes in the electrical conductance of encapsulated Ca sensors with time. The water vapor transmission rate is found to be slightly minimized (7 × 10-3 g/m2day) for stacked SiNx single-layers exposed to argon plasma treatment during a short time (2 min) as compared to that for stacked SiNx single-layers without Ar plasma treatment.",

keywords = "Ar-plasma treatment, HW-CVD, Permeation barrier, Silicon nitride",

author = "S. Majee and Cerqueira, \{M. F.\} and D. Tondelier and Vanel, \{J. C.\} and B. Geffroy and Y. Bonnassieux and P. Alpuim and Bour{\'e}e, \{J. E.\}",

year = "2015",

month = jan,

day = "30",

doi = "10.1016/j.tsf.2014.10.009",

language = "English",

volume = "575",

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journal = "Thin Solid Films",

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TY - JOUR

T1 - Permeation barrier performance of Hot Wire-CVD grown silicon-nitride films treated by argon plasma

AU - Majee, S.

AU - Cerqueira, M. F.

AU - Tondelier, D.

AU - Vanel, J. C.

AU - Geffroy, B.

AU - Bonnassieux, Y.

AU - Alpuim, P.

AU - Bourée, J. E.

PY - 2015/1/30

Y1 - 2015/1/30

N2 - In this work SiNx thin films have been deposited by Hot-Wire Chemical Vapor Deposition (HW-CVD) technique to be used as encapsulation barriers for flexible organic electronic devices fabricated on polyethylene terephthalate (PET) substrates. First results of SiNx multilayers stacked and stacks of SiNx single-layers (50 nm each) separated by an Ar-plasma surface treatment are reported. The encapsulation barrier properties of these different multilayers are assessed using the electrical calcium degradation test by monitoring changes in the electrical conductance of encapsulated Ca sensors with time. The water vapor transmission rate is found to be slightly minimized (7 × 10-3 g/m2day) for stacked SiNx single-layers exposed to argon plasma treatment during a short time (2 min) as compared to that for stacked SiNx single-layers without Ar plasma treatment.

AB - In this work SiNx thin films have been deposited by Hot-Wire Chemical Vapor Deposition (HW-CVD) technique to be used as encapsulation barriers for flexible organic electronic devices fabricated on polyethylene terephthalate (PET) substrates. First results of SiNx multilayers stacked and stacks of SiNx single-layers (50 nm each) separated by an Ar-plasma surface treatment are reported. The encapsulation barrier properties of these different multilayers are assessed using the electrical calcium degradation test by monitoring changes in the electrical conductance of encapsulated Ca sensors with time. The water vapor transmission rate is found to be slightly minimized (7 × 10-3 g/m2day) for stacked SiNx single-layers exposed to argon plasma treatment during a short time (2 min) as compared to that for stacked SiNx single-layers without Ar plasma treatment.

KW - Ar-plasma treatment

KW - HW-CVD

KW - Permeation barrier

KW - Silicon nitride

UR - https://www.scopus.com/pages/publications/84922343476

U2 - 10.1016/j.tsf.2014.10.009

DO - 10.1016/j.tsf.2014.10.009

M3 - Article

AN - SCOPUS:84922343476

SN - 0040-6090

VL - 575

SP - 72

EP - 75

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Permeation barrier performance of Hot Wire-CVD grown silicon-nitride films treated by argon plasma

Abstract

Keywords

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