Phonon sidebands in exciton and biexciton emission from single GaAs quantum dots

E. Peter; J. Hours; P. Senellart; A. Vasanelli; A. Cavanna; J. Bloch; J. M. Gérard

doi:10.1103/PhysRevB.69.041307

Phonon sidebands in exciton and biexciton emission from single GaAs quantum dots

E. Peter
, J. Hours
, P. Senellart
, A. Vasanelli
, A. Cavanna
, J. Bloch
, J. M. Gérard

École Polytechnique

Centre national de la recherche scientifique
CEA/DRFMC/SP2M
Univ. Joseph Fourier-Grenoble 1

Research output: Contribution to journal › Article › peer-review

72 Citations (Scopus)

Abstract

We report on the observation of asymmetric phonon sidebands on both the exciton and biexciton emission lines in single GaAs monolayer fluctuation quantum dots. The contribution of phonon sidebands to the emission line is larger for the biexciton than for the exciton. We model the exciton line shape by means of a nonperturbative coupling with acoustic phonons and show that energetic confinement is an important clue to understand why phonon sidebands are sometimes observed and sometimes not. Finally, we discuss the extension of our model to the biexciton case.

Original language	English
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	69
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.69.041307
Publication status	Published - 26 Jan 2004

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10.1103/PhysRevB.69.041307

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title = "Phonon sidebands in exciton and biexciton emission from single GaAs quantum dots",

abstract = "We report on the observation of asymmetric phonon sidebands on both the exciton and biexciton emission lines in single GaAs monolayer fluctuation quantum dots. The contribution of phonon sidebands to the emission line is larger for the biexciton than for the exciton. We model the exciton line shape by means of a nonperturbative coupling with acoustic phonons and show that energetic confinement is an important clue to understand why phonon sidebands are sometimes observed and sometimes not. Finally, we discuss the extension of our model to the biexciton case.",

author = "E. Peter and J. Hours and P. Senellart and A. Vasanelli and A. Cavanna and J. Bloch and G{\'e}rard, \{J. M.\}",

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doi = "10.1103/PhysRevB.69.041307",

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T1 - Phonon sidebands in exciton and biexciton emission from single GaAs quantum dots

AU - Peter, E.

AU - Hours, J.

AU - Senellart, P.

AU - Vasanelli, A.

AU - Cavanna, A.

AU - Bloch, J.

AU - Gérard, J. M.

PY - 2004/1/26

Y1 - 2004/1/26

N2 - We report on the observation of asymmetric phonon sidebands on both the exciton and biexciton emission lines in single GaAs monolayer fluctuation quantum dots. The contribution of phonon sidebands to the emission line is larger for the biexciton than for the exciton. We model the exciton line shape by means of a nonperturbative coupling with acoustic phonons and show that energetic confinement is an important clue to understand why phonon sidebands are sometimes observed and sometimes not. Finally, we discuss the extension of our model to the biexciton case.

AB - We report on the observation of asymmetric phonon sidebands on both the exciton and biexciton emission lines in single GaAs monolayer fluctuation quantum dots. The contribution of phonon sidebands to the emission line is larger for the biexciton than for the exciton. We model the exciton line shape by means of a nonperturbative coupling with acoustic phonons and show that energetic confinement is an important clue to understand why phonon sidebands are sometimes observed and sometimes not. Finally, we discuss the extension of our model to the biexciton case.

U2 - 10.1103/PhysRevB.69.041307

DO - 10.1103/PhysRevB.69.041307

M3 - Article

AN - SCOPUS:1542284049

SN - 1098-0121

VL - 69

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 4

ER -

Phonon sidebands in exciton and biexciton emission from single GaAs quantum dots

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