Photo-assisted deposition of thin films on III-V semiconductors with UV and IR lamps

Y. I. Nissim; J. M. Moison; F. Houzay; F. Lebland; C. Licoppe; M. Bensoussan

doi:10.1016/0169-4332(90)90139-Q

Photo-assisted deposition of thin films on III-V semiconductors with UV and IR lamps

Y. I. Nissim, J. M. Moison, F. Houzay, F. Lebland, C. Licoppe, M. Bensoussan

Orange Labs

Research output: Contribution to journal › Article › peer-review

Abstract

New chemical vapour deposition (CVD) processes controlled by light irradiation are studied and applied to III-V semiconductor device technology. The interactions between the incident photons and the gas-substrate system are either photolytic (UV lamps) or pyrolytic (IR lamps). In the first case the process is cold and in the second one it produces fast thermal ramping. The technique is thus compatible in both cases with the fragile semiconductor substrate and it allows in-situ processing. We report here a set of results involving surface and interface studies in order to prepare the deposition of thin-film materials, thin dielectric film deposition using "flash" CVD or UVCVD, and the first attempts to deposit semiconductors and metals using the same "flash" CVD techniques. the aim of this work is to propose alternative technologies for III-V semiconductors.

Original language	English
Pages (from-to)	175-188
Number of pages	14
Journal	Applied Surface Science
Volume	46
Issue number	1-4
DOIs	https://doi.org/10.1016/0169-4332(90)90139-Q
Publication status	Published - 2 Dec 1990
Externally published	Yes

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Cite this

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title = "Photo-assisted deposition of thin films on III-V semiconductors with UV and IR lamps",

abstract = "New chemical vapour deposition (CVD) processes controlled by light irradiation are studied and applied to III-V semiconductor device technology. The interactions between the incident photons and the gas-substrate system are either photolytic (UV lamps) or pyrolytic (IR lamps). In the first case the process is cold and in the second one it produces fast thermal ramping. The technique is thus compatible in both cases with the fragile semiconductor substrate and it allows in-situ processing. We report here a set of results involving surface and interface studies in order to prepare the deposition of thin-film materials, thin dielectric film deposition using {"}flash{"} CVD or UVCVD, and the first attempts to deposit semiconductors and metals using the same {"}flash{"} CVD techniques. the aim of this work is to propose alternative technologies for III-V semiconductors.",

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doi = "10.1016/0169-4332(90)90139-Q",

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T1 - Photo-assisted deposition of thin films on III-V semiconductors with UV and IR lamps

AU - Nissim, Y. I.

AU - Moison, J. M.

AU - Houzay, F.

AU - Lebland, F.

AU - Licoppe, C.

AU - Bensoussan, M.

PY - 1990/12/2

Y1 - 1990/12/2

N2 - New chemical vapour deposition (CVD) processes controlled by light irradiation are studied and applied to III-V semiconductor device technology. The interactions between the incident photons and the gas-substrate system are either photolytic (UV lamps) or pyrolytic (IR lamps). In the first case the process is cold and in the second one it produces fast thermal ramping. The technique is thus compatible in both cases with the fragile semiconductor substrate and it allows in-situ processing. We report here a set of results involving surface and interface studies in order to prepare the deposition of thin-film materials, thin dielectric film deposition using "flash" CVD or UVCVD, and the first attempts to deposit semiconductors and metals using the same "flash" CVD techniques. the aim of this work is to propose alternative technologies for III-V semiconductors.

AB - New chemical vapour deposition (CVD) processes controlled by light irradiation are studied and applied to III-V semiconductor device technology. The interactions between the incident photons and the gas-substrate system are either photolytic (UV lamps) or pyrolytic (IR lamps). In the first case the process is cold and in the second one it produces fast thermal ramping. The technique is thus compatible in both cases with the fragile semiconductor substrate and it allows in-situ processing. We report here a set of results involving surface and interface studies in order to prepare the deposition of thin-film materials, thin dielectric film deposition using "flash" CVD or UVCVD, and the first attempts to deposit semiconductors and metals using the same "flash" CVD techniques. the aim of this work is to propose alternative technologies for III-V semiconductors.

U2 - 10.1016/0169-4332(90)90139-Q

DO - 10.1016/0169-4332(90)90139-Q

M3 - Article

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SN - 0169-4332

VL - 46

SP - 175

EP - 188

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

ER -

Photo-assisted deposition of thin films on III-V semiconductors with UV and IR lamps

Abstract

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