Photoassisted tunneling from free-standing GaAs thin films into metallic surfaces

The tunnel photocurrent between a gold surface and a free-standing semiconducting thin film excited from the rear by above band-gap light has been measured as a function of applied bias, tunnel distance, and excitation light power. The results are compared with the predictions of a model which includes the bias dependence of the tunnel barrier height and the bias-induced decrease in surface recombination velocity. It is found that (i) the tunnel photocurrent from the conduction band dominates that from surface states. (ii) At large tunnel distance, the exponential bias dependence of the current is explained by that of the tunnel barrier height while at small distance, the change in surface recombination velocity is dominant.