Abstract
A new bath composition for ZnS buffer layer deposition is presented allowing its photochemical growth on CIGSe absorbers. The main advantages of this solution compared to classical CBD-Zn(S,O) bath are: the deposition occurs at room temperature, the concentration of chemical precursors is 10 times lower than classical CBD-Zn(S,O), the use of a complexing agent such as ammonia is avoided and the same bath can be reused for several depositions. The same bath can be re-used for at least 4 times, leading to efficiencies between 13 and 14%, which is similar to what is obtained with CdS-buffered references.
| Original language | English |
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| Title of host publication | 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 110-116 |
| Number of pages | 7 |
| ISBN (Electronic) | 9781509056057 |
| Publication status | Published - 1 Jan 2017 |
| Event | 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: 25 Jun 2017 → 30 Jun 2017 |
Publication series
| Name | 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 |
|---|
Conference
| Conference | 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 |
|---|---|
| Country/Territory | United States |
| City | Washington |
| Period | 25/06/17 → 30/06/17 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- Buffer layer
- Cd-free
- Cu(In
- Electrodeposition
- Ga)Se
- Photochemical deposition
- ZnS
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