Photoelectrochemical deposition of ZnO films via nitrate ions reduction in the presence of thiourea on p-type Cu(In,Ga)Se2 semiconducting electrodes for photovoltaic applications

S. Gallanti; E. Chassaing; M. Bouttemy; A. Etcheberry; D. Lincot; N. Naghavi

doi:10.1007/s10800-017-1119-5

Photoelectrochemical deposition of ZnO films via nitrate ions reduction in the presence of thiourea on p-type Cu(In,Ga)Se₂ semiconducting electrodes for photovoltaic applications

S. Gallanti
, E. Chassaing
, M. Bouttemy
, A. Etcheberry
, D. Lincot
, N. Naghavi

Centre national de la recherche scientifique
Institut Photovoltaïque d'Ile-de-France
Institut Lavoisier de Versailles

Research output: Contribution to journal › Article › peer-review

Abstract

Abstract: This work describes the electrodeposition of ZnO layers on p-type copper indium gallium diselenide [Cu(InGa)Se₂] substrates via nitrate ions reduction in the presence of thiourea. The substrate stability domain has been determined by means of cyclic voltammetry in acidic medium. The optimal deposition range has been studied in zinc nitrate electrolyte containing concentrations of thiourea between 0 and 1.0 M. Zinc oxide films have been photoelectrodeposited in a potential range between − 0.95 and − 1.1 V/MSE depending on thiourea concentration. The morphology and composition analyses by scanning electron microscopy, X-ray diffraction spectroscopy, and energy dispersive X-ray spectroscopy have highlighted that the deposited films are composed of well-crystallized ZnO presenting wurtzite-type structure with no significant sulfur incorporation.

Original language	English
Pages (from-to)	1283-1291
Number of pages	9
Journal	Journal of Applied Electrochemistry
Volume	47
Issue number	12
DOIs	https://doi.org/10.1007/s10800-017-1119-5
Publication status	Published - 1 Dec 2017

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Cu(In,Ga)Se
Nanoporous films
Photoelectrodeposited ZnO
Thiourea
XPS analysis

Access to Document

10.1007/s10800-017-1119-5

Cite this

Gallanti, S., Chassaing, E., Bouttemy, M., Etcheberry, A., Lincot, D., & Naghavi, N. (2017). Photoelectrochemical deposition of ZnO films via nitrate ions reduction in the presence of thiourea on p-type Cu(In,Ga)Se₂ semiconducting electrodes for photovoltaic applications. Journal of Applied Electrochemistry, 47(12), 1283-1291. https://doi.org/10.1007/s10800-017-1119-5

@article{c93017c3710647e8a70cf4e306020cfe,

title = "Photoelectrochemical deposition of ZnO films via nitrate ions reduction in the presence of thiourea on p-type Cu(In,Ga)Se2 semiconducting electrodes for photovoltaic applications",

abstract = "Abstract: This work describes the electrodeposition of ZnO layers on p-type copper indium gallium diselenide [Cu(InGa)Se2] substrates via nitrate ions reduction in the presence of thiourea. The substrate stability domain has been determined by means of cyclic voltammetry in acidic medium. The optimal deposition range has been studied in zinc nitrate electrolyte containing concentrations of thiourea between 0 and 1.0 M. Zinc oxide films have been photoelectrodeposited in a potential range between − 0.95 and − 1.1 V/MSE depending on thiourea concentration. The morphology and composition analyses by scanning electron microscopy, X-ray diffraction spectroscopy, and energy dispersive X-ray spectroscopy have highlighted that the deposited films are composed of well-crystallized ZnO presenting wurtzite-type structure with no significant sulfur incorporation.",

keywords = "Cu(In,Ga)Se, Nanoporous films, Photoelectrodeposited ZnO, Thiourea, XPS analysis",

author = "S. Gallanti and E. Chassaing and M. Bouttemy and A. Etcheberry and D. Lincot and N. Naghavi",

note = "Publisher Copyright: {\textcopyright} 2017, Springer Science+Business Media B.V.",

year = "2017",

month = dec,

day = "1",

doi = "10.1007/s10800-017-1119-5",

language = "English",

volume = "47",

pages = "1283--1291",

journal = "Journal of Applied Electrochemistry",

issn = "0021-891X",

publisher = "Springer Netherlands",

number = "12",

}

Gallanti, S, Chassaing, E, Bouttemy, M, Etcheberry, A, Lincot, D & Naghavi, N 2017, 'Photoelectrochemical deposition of ZnO films via nitrate ions reduction in the presence of thiourea on p-type Cu(In,Ga)Se₂ semiconducting electrodes for photovoltaic applications', Journal of Applied Electrochemistry, vol. 47, no. 12, pp. 1283-1291. https://doi.org/10.1007/s10800-017-1119-5

Photoelectrochemical deposition of ZnO films via nitrate ions reduction in the presence of thiourea on p-type Cu(In,Ga)Se₂ semiconducting electrodes for photovoltaic applications. / Gallanti, S.; Chassaing, E.; Bouttemy, M. et al.
In: Journal of Applied Electrochemistry, Vol. 47, No. 12, 01.12.2017, p. 1283-1291.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Photoelectrochemical deposition of ZnO films via nitrate ions reduction in the presence of thiourea on p-type Cu(In,Ga)Se2 semiconducting electrodes for photovoltaic applications

AU - Gallanti, S.

AU - Chassaing, E.

AU - Bouttemy, M.

AU - Etcheberry, A.

AU - Lincot, D.

AU - Naghavi, N.

PY - 2017/12/1

Y1 - 2017/12/1

N2 - Abstract: This work describes the electrodeposition of ZnO layers on p-type copper indium gallium diselenide [Cu(InGa)Se2] substrates via nitrate ions reduction in the presence of thiourea. The substrate stability domain has been determined by means of cyclic voltammetry in acidic medium. The optimal deposition range has been studied in zinc nitrate electrolyte containing concentrations of thiourea between 0 and 1.0 M. Zinc oxide films have been photoelectrodeposited in a potential range between − 0.95 and − 1.1 V/MSE depending on thiourea concentration. The morphology and composition analyses by scanning electron microscopy, X-ray diffraction spectroscopy, and energy dispersive X-ray spectroscopy have highlighted that the deposited films are composed of well-crystallized ZnO presenting wurtzite-type structure with no significant sulfur incorporation.

AB - Abstract: This work describes the electrodeposition of ZnO layers on p-type copper indium gallium diselenide [Cu(InGa)Se2] substrates via nitrate ions reduction in the presence of thiourea. The substrate stability domain has been determined by means of cyclic voltammetry in acidic medium. The optimal deposition range has been studied in zinc nitrate electrolyte containing concentrations of thiourea between 0 and 1.0 M. Zinc oxide films have been photoelectrodeposited in a potential range between − 0.95 and − 1.1 V/MSE depending on thiourea concentration. The morphology and composition analyses by scanning electron microscopy, X-ray diffraction spectroscopy, and energy dispersive X-ray spectroscopy have highlighted that the deposited films are composed of well-crystallized ZnO presenting wurtzite-type structure with no significant sulfur incorporation.

KW - Cu(In,Ga)Se

KW - Nanoporous films

KW - Photoelectrodeposited ZnO

KW - Thiourea

KW - XPS analysis

U2 - 10.1007/s10800-017-1119-5

DO - 10.1007/s10800-017-1119-5

M3 - Article

AN - SCOPUS:85029908422

SN - 0021-891X

VL - 47

SP - 1283

EP - 1291

JO - Journal of Applied Electrochemistry

JF - Journal of Applied Electrochemistry

IS - 12

ER -