Photoelectrochemical study of state of art copper indium gallium diselenide thin films

E. Clolus; A. Galtayries; B. Canava; J. F. Guillemoles; D. Lincot

doi:10.1557/proc-668-h9.7

Photoelectrochemical study of state of art copper indium gallium diselenide thin films

E. Clolus
, A. Galtayries
, B. Canava
, J. F. Guillemoles
, D. Lincot

PSL University

Research output: Contribution to journal › Conference article › peer-review

Abstract

State of the art CIGS thin films have been studied by means of the semiconductor-electrolyte junction. They appear as chemically robust allowing to use aggressive electrolyte compositions as for instance more acidic pH, down to 0 in sulfuric acid environment. In these electrolytes, reliable capacitance and photo-current related characterization techniques have been used. It has been shown that a short treatment in a gold (III) solution can facilitate the characterizations, and stabilize the surface composition. These results tend towards settling a standardized electrochemical testing procedure for CIGS layers.

Original language	English
Pages (from-to)	H971-H976
Journal	Materials Research Society Symposium - Proceedings
Volume	668
DOIs	https://doi.org/10.1557/proc-668-h9.7
Publication status	Published - 1 Jan 2001
Externally published	Yes
Event	II - VI Compound Semiconductor Photovoltaic Materials - San Francisco, CA, United States Duration: 16 Apr 2001 → 20 Apr 2001

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title = "Photoelectrochemical study of state of art copper indium gallium diselenide thin films",

abstract = "State of the art CIGS thin films have been studied by means of the semiconductor-electrolyte junction. They appear as chemically robust allowing to use aggressive electrolyte compositions as for instance more acidic pH, down to 0 in sulfuric acid environment. In these electrolytes, reliable capacitance and photo-current related characterization techniques have been used. It has been shown that a short treatment in a gold (III) solution can facilitate the characterizations, and stabilize the surface composition. These results tend towards settling a standardized electrochemical testing procedure for CIGS layers.",

author = "E. Clolus and A. Galtayries and B. Canava and Guillemoles, \{J. F.\} and D. Lincot",

year = "2001",

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doi = "10.1557/proc-668-h9.7",

language = "English",

volume = "668",

pages = "H971--H976",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "II - VI Compound Semiconductor Photovoltaic Materials ; Conference date: 16-04-2001 Through 20-04-2001",

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T1 - Photoelectrochemical study of state of art copper indium gallium diselenide thin films

AU - Clolus, E.

AU - Galtayries, A.

AU - Canava, B.

AU - Guillemoles, J. F.

AU - Lincot, D.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - State of the art CIGS thin films have been studied by means of the semiconductor-electrolyte junction. They appear as chemically robust allowing to use aggressive electrolyte compositions as for instance more acidic pH, down to 0 in sulfuric acid environment. In these electrolytes, reliable capacitance and photo-current related characterization techniques have been used. It has been shown that a short treatment in a gold (III) solution can facilitate the characterizations, and stabilize the surface composition. These results tend towards settling a standardized electrochemical testing procedure for CIGS layers.

AB - State of the art CIGS thin films have been studied by means of the semiconductor-electrolyte junction. They appear as chemically robust allowing to use aggressive electrolyte compositions as for instance more acidic pH, down to 0 in sulfuric acid environment. In these electrolytes, reliable capacitance and photo-current related characterization techniques have been used. It has been shown that a short treatment in a gold (III) solution can facilitate the characterizations, and stabilize the surface composition. These results tend towards settling a standardized electrochemical testing procedure for CIGS layers.

U2 - 10.1557/proc-668-h9.7

DO - 10.1557/proc-668-h9.7

M3 - Conference article

AN - SCOPUS:0035557057

SN - 0272-9172

VL - 668

SP - H971-H976

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - II - VI Compound Semiconductor Photovoltaic Materials

Y2 - 16 April 2001 through 20 April 2001

ER -

Photoelectrochemical study of state of art copper indium gallium diselenide thin films

Abstract

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