Photoinduced effects in RF and VHF a-Si:H films deposited with different ion bombardment

A. S. Abramov; A. I. Kosarev; P. Roca I Cabarrocas; M. V. Shutov; A. J. Vinogradov

doi:10.1016/S0040-6090(00)01629-1

Photoinduced effects in RF and VHF a-Si:H films deposited with different ion bombardment

A. S. Abramov, A. I. Kosarev, P. Roca I Cabarrocas, M. V. Shutov, A. J. Vinogradov

Ioffe Institute

Research output: Contribution to journal › Article › peer-review

Abstract

Hydrogenated amorphous silicon (a-Si:H) films were deposited in a diode-type reactor in RF and VHF discharge under controlled ion bombardment. Defect concentration in the films was studied as a function of the energy of ions impinging on the growing film in as-grown (A), light-soaked (B), and annealed states (C). Significant changes in defect concentration, and Fermi-level position with ion energy were observed in the samples in A-and C-states, while ion bombardment caused less changes in the properties in the B-state. The data obtained are discussed in terms of the generation of D₀ and D_- defect states, which are controlled by ion bombardment of the films during growth.

Original language	English
Pages (from-to)	178-180
Number of pages	3
Journal	Thin Solid Films
Volume	383
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(00)01629-1
Publication status	Published - 15 Feb 2001

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@article{946210fa1edb4024ba9ca80763e2e60f,

title = "Photoinduced effects in RF and VHF a-Si:H films deposited with different ion bombardment",

abstract = "Hydrogenated amorphous silicon (a-Si:H) films were deposited in a diode-type reactor in RF and VHF discharge under controlled ion bombardment. Defect concentration in the films was studied as a function of the energy of ions impinging on the growing film in as-grown (A), light-soaked (B), and annealed states (C). Significant changes in defect concentration, and Fermi-level position with ion energy were observed in the samples in A-and C-states, while ion bombardment caused less changes in the properties in the B-state. The data obtained are discussed in terms of the generation of D0 and D- defect states, which are controlled by ion bombardment of the films during growth.",

author = "Abramov, \{A. S.\} and Kosarev, \{A. I.\} and \{Roca I Cabarrocas\}, P. and Shutov, \{M. V.\} and Vinogradov, \{A. J.\}",

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doi = "10.1016/S0040-6090(00)01629-1",

language = "English",

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T1 - Photoinduced effects in RF and VHF a-Si:H films deposited with different ion bombardment

AU - Abramov, A. S.

AU - Kosarev, A. I.

AU - Roca I Cabarrocas, P.

AU - Shutov, M. V.

AU - Vinogradov, A. J.

PY - 2001/2/15

Y1 - 2001/2/15

N2 - Hydrogenated amorphous silicon (a-Si:H) films were deposited in a diode-type reactor in RF and VHF discharge under controlled ion bombardment. Defect concentration in the films was studied as a function of the energy of ions impinging on the growing film in as-grown (A), light-soaked (B), and annealed states (C). Significant changes in defect concentration, and Fermi-level position with ion energy were observed in the samples in A-and C-states, while ion bombardment caused less changes in the properties in the B-state. The data obtained are discussed in terms of the generation of D0 and D- defect states, which are controlled by ion bombardment of the films during growth.

AB - Hydrogenated amorphous silicon (a-Si:H) films were deposited in a diode-type reactor in RF and VHF discharge under controlled ion bombardment. Defect concentration in the films was studied as a function of the energy of ions impinging on the growing film in as-grown (A), light-soaked (B), and annealed states (C). Significant changes in defect concentration, and Fermi-level position with ion energy were observed in the samples in A-and C-states, while ion bombardment caused less changes in the properties in the B-state. The data obtained are discussed in terms of the generation of D0 and D- defect states, which are controlled by ion bombardment of the films during growth.

U2 - 10.1016/S0040-6090(00)01629-1

DO - 10.1016/S0040-6090(00)01629-1

M3 - Article

AN - SCOPUS:0035246859

SN - 0040-6090

VL - 383

SP - 178

EP - 180

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Photoinduced effects in RF and VHF a-Si:H films deposited with different ion bombardment

Abstract

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