TY - JOUR
T1 - Photonic nanostructures for advanced light trapping in thin crystalline silicon solar cells
AU - Trompoukis, Christos
AU - Abdo, Islam
AU - Cariou, Romain
AU - Cosme, Ismael
AU - Chen, Wanghua
AU - Deparis, Olivier
AU - Dmitriev, Alexandre
AU - Drouard, Emmanuel
AU - Foldyna, Martin
AU - Garcia-Caurel, Enric
AU - Gordon, Ivan
AU - Heidari, Babak
AU - Herman, Aline
AU - Lalouat, Loic
AU - Lee, Ki Dong
AU - Liu, Jia
AU - Lodewijks, Kristof
AU - Mandorlo, Fabien
AU - Massiot, Inès
AU - Mayer, Alexandre
AU - Mijkovic, Vladimir
AU - Muller, Jerome
AU - Orobtchouk, Regis
AU - Poulain, Gilles
AU - Prod'Homme, Patricia
AU - Roca I Cabarrocas, Pere
AU - Seassal, Christian
AU - Poortmans, Jef
AU - Mertens, Robert
AU - El Daif, Ounsi
AU - Depauw, Valérie
N1 - Publisher Copyright:
© 2014 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
PY - 2015/1/1
Y1 - 2015/1/1
N2 - We report on the fabrication, integration, and simulation, both optical and optoelectrical, of two-dimensional photonic nanostructures for advanced light trapping in thin crystalline silicon (c-Si) solar cells. The photonic nanostructures are fabricated by the combination of various lithography (nanoimprint, laser interference, and hole mask colloidal) and etching (dry plasma and wet chemical) techniques. The nanopatterning possibilities thus range from periodic to random corrugations and from inverted nanopyramids to high aspect ratio profiles. Optically, the nanopatterning results in better performance than the standard pyramid texturing, showing a more robust behavior with respect to light incidence angle. Electrically, wet etching results in higher minority carrier lifetimes compared to dry etching. From the integration of the photonic nanostructures into a micron-thin c-Si solar cell certain factors limiting the efficiencies are identified. More precisely: (a) the parasitic absorption is limiting the short circuit current, (b) the conformality of thin-film coatings on the nanopatterned surface is limiting the fill factor, and (c) the material damage from dry etching is limiting the open circuit voltage. From optical simulations, the optimal pattern parameters are identified. From optoelectrical simulations, cell design considerations are discussed, suggesting to position the junction on the opposite side of the nanopattern.
AB - We report on the fabrication, integration, and simulation, both optical and optoelectrical, of two-dimensional photonic nanostructures for advanced light trapping in thin crystalline silicon (c-Si) solar cells. The photonic nanostructures are fabricated by the combination of various lithography (nanoimprint, laser interference, and hole mask colloidal) and etching (dry plasma and wet chemical) techniques. The nanopatterning possibilities thus range from periodic to random corrugations and from inverted nanopyramids to high aspect ratio profiles. Optically, the nanopatterning results in better performance than the standard pyramid texturing, showing a more robust behavior with respect to light incidence angle. Electrically, wet etching results in higher minority carrier lifetimes compared to dry etching. From the integration of the photonic nanostructures into a micron-thin c-Si solar cell certain factors limiting the efficiencies are identified. More precisely: (a) the parasitic absorption is limiting the short circuit current, (b) the conformality of thin-film coatings on the nanopatterned surface is limiting the fill factor, and (c) the material damage from dry etching is limiting the open circuit voltage. From optical simulations, the optimal pattern parameters are identified. From optoelectrical simulations, cell design considerations are discussed, suggesting to position the junction on the opposite side of the nanopattern.
KW - Light trapping
KW - Photonic crystals
KW - Photonic nanostructures
KW - Silicon
KW - Solar cells
KW - Thin films
U2 - 10.1002/pssa.201431180
DO - 10.1002/pssa.201431180
M3 - Article
AN - SCOPUS:84920792412
SN - 1862-6300
VL - 212
SP - 140
EP - 155
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
IS - 1
ER -