Physics of the inter-subband transition in quantum-dot intermediate-band solar cell

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This theoretical study sheds light on questions raised by inter-subband transition in quantum dot intermediate band solar cells. Based on a dedicated analytical model that correctly treats, from a quantum point-of-view, the trade-off between the absorption, the recombination and the electronic transport, we clearly show that it is essential to control the transit rate between the excited state of the quantum dot and the embedding semiconductor with a tunnel barrier. Such a barrier, matching the recombination and the tunnel rates, allows to strongly improve the current. On the other hand, by better controlling the retrapping, such a barrier can also improve the voltage. Finally this work, by giving a framework to design efficient inter-subband transitions, opens new opportunities for quantum dot intermediate-band solar cells.

Original languageEnglish
Title of host publicationPhysics, Simulation, and Photonic Engineering of Photovoltaic Devices IX
EditorsAlexandre Freundlich, Masakazu Sugiyama, Stephane Collin
PublisherSPIE
ISBN (Electronic)9781510633131
DOIs
Publication statusPublished - 1 Jan 2020
EventPhysics, Simulation, and Photonic Engineering of Photovoltaic Devices IX 2020 - San Francisco, United States
Duration: 4 Feb 20206 Feb 2020

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume11275
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferencePhysics, Simulation, and Photonic Engineering of Photovoltaic Devices IX 2020
Country/TerritoryUnited States
CitySan Francisco
Period4/02/206/02/20

Keywords

  • Confinement
  • Intermediate band
  • Quantum electronic transport
  • Tunnelling

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