Plasma emission diagnostics during fast deposition of microcrystalline silicon thin films in matrix distributed electron cyclotron resonance plasma CVD system

Sanjay K. Ram; Laurent Kroely; Samir Kasouit; Pavel Bulkin; Pere Roca I Cabarrocas

doi:10.1002/pssc.200982817

Plasma emission diagnostics during fast deposition of microcrystalline silicon thin films in matrix distributed electron cyclotron resonance plasma CVD system

Sanjay K. Ram
, Laurent Kroely
, Samir Kasouit
, Pavel Bulkin
, Pere Roca I Cabarrocas

Research output: Contribution to journal › Conference article › peer-review

Abstract

The structural and optoelectronic properties of undoped hydrogenated microcrystalline silicon (μc-Si:H) films deposited in a matrix distributed electron cyclotron resonance (MDECR) plasma CVD system using pure silane were studied as a function of microwave power (P_MW) and gas pressure (P_gas). The analysis of the silane plasma optical emission spectra (OES) shows the effect of the deposition conditions on the plasma chemistry and resulting film microstructure as studied by spectroscopic ellipsometry and atomic force microscopy. The use of the P_MW and P_gas as tunable parameters to achieve μc-Si:H films with desired microstructure is discussed. Intrinsic μc-Si:H films with good phototransport properties were realized at high deposition rate. Our study shows the usefulness of OES as a fast diagnostic tool for controlling and optimizing the μc-Si:H deposition process in MDECR reactor.

Original language	English
Pages (from-to)	553-556
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	7
Issue number	3-4
DOIs	https://doi.org/10.1002/pssc.200982817
Publication status	Published - 27 May 2010
Event	23rd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS23 - Utrecht, Netherlands Duration: 23 Aug 2009 → 28 Aug 2009

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@article{f08192fae077415187b92061a3ede3dc,

title = "Plasma emission diagnostics during fast deposition of microcrystalline silicon thin films in matrix distributed electron cyclotron resonance plasma CVD system",

abstract = "The structural and optoelectronic properties of undoped hydrogenated microcrystalline silicon (μc-Si:H) films deposited in a matrix distributed electron cyclotron resonance (MDECR) plasma CVD system using pure silane were studied as a function of microwave power (PMW) and gas pressure (Pgas). The analysis of the silane plasma optical emission spectra (OES) shows the effect of the deposition conditions on the plasma chemistry and resulting film microstructure as studied by spectroscopic ellipsometry and atomic force microscopy. The use of the PMW and Pgas as tunable parameters to achieve μc-Si:H films with desired microstructure is discussed. Intrinsic μc-Si:H films with good phototransport properties were realized at high deposition rate. Our study shows the usefulness of OES as a fast diagnostic tool for controlling and optimizing the μc-Si:H deposition process in MDECR reactor.",

author = "Ram, \{Sanjay K.\} and Laurent Kroely and Samir Kasouit and Pavel Bulkin and \{Roca I Cabarrocas\}, Pere",

year = "2010",

month = may,

day = "27",

doi = "10.1002/pssc.200982817",

language = "English",

volume = "7",

pages = "553--556",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

number = "3-4",

note = "23rd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS23 ; Conference date: 23-08-2009 Through 28-08-2009",

}

Plasma emission diagnostics during fast deposition of microcrystalline silicon thin films in matrix distributed electron cyclotron resonance plasma CVD system. / Ram, Sanjay K.; Kroely, Laurent; Kasouit, Samir et al.
In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 7, No. 3-4, 27.05.2010, p. 553-556.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Plasma emission diagnostics during fast deposition of microcrystalline silicon thin films in matrix distributed electron cyclotron resonance plasma CVD system

AU - Ram, Sanjay K.

AU - Kroely, Laurent

AU - Kasouit, Samir

AU - Bulkin, Pavel

AU - Roca I Cabarrocas, Pere

PY - 2010/5/27

Y1 - 2010/5/27

N2 - The structural and optoelectronic properties of undoped hydrogenated microcrystalline silicon (μc-Si:H) films deposited in a matrix distributed electron cyclotron resonance (MDECR) plasma CVD system using pure silane were studied as a function of microwave power (PMW) and gas pressure (Pgas). The analysis of the silane plasma optical emission spectra (OES) shows the effect of the deposition conditions on the plasma chemistry and resulting film microstructure as studied by spectroscopic ellipsometry and atomic force microscopy. The use of the PMW and Pgas as tunable parameters to achieve μc-Si:H films with desired microstructure is discussed. Intrinsic μc-Si:H films with good phototransport properties were realized at high deposition rate. Our study shows the usefulness of OES as a fast diagnostic tool for controlling and optimizing the μc-Si:H deposition process in MDECR reactor.

AB - The structural and optoelectronic properties of undoped hydrogenated microcrystalline silicon (μc-Si:H) films deposited in a matrix distributed electron cyclotron resonance (MDECR) plasma CVD system using pure silane were studied as a function of microwave power (PMW) and gas pressure (Pgas). The analysis of the silane plasma optical emission spectra (OES) shows the effect of the deposition conditions on the plasma chemistry and resulting film microstructure as studied by spectroscopic ellipsometry and atomic force microscopy. The use of the PMW and Pgas as tunable parameters to achieve μc-Si:H films with desired microstructure is discussed. Intrinsic μc-Si:H films with good phototransport properties were realized at high deposition rate. Our study shows the usefulness of OES as a fast diagnostic tool for controlling and optimizing the μc-Si:H deposition process in MDECR reactor.

U2 - 10.1002/pssc.200982817

DO - 10.1002/pssc.200982817

M3 - Conference article

AN - SCOPUS:77952579182

SN - 1862-6351

VL - 7

SP - 553

EP - 556

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 3-4

T2 - 23rd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS23

Y2 - 23 August 2009 through 28 August 2009

ER -

Plasma emission diagnostics during fast deposition of microcrystalline silicon thin films in matrix distributed electron cyclotron resonance plasma CVD system

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