Abstract
We have studied systematically a dry and free mask texturing process of crystalline silicon wafers using SF6/O2 plasmas in a reactive ion etching (RIE) system, with special attention on the effect of the RF plasma power and the SF6/O2 ratio on the texture of the silicon surface. In particular, we have found that by increasing the RF power, with an optimized SF6/O2 ratio and pressure it is possible to switch from a random texture, to a pyramid-like texture and finally to an inverted pyramid-like texture. This resulted in average reflectance values as low as 6%, which open an exciting opportunity for crystalline silicon solar cells applications.
| Original language | English |
|---|---|
| Pages (from-to) | 733-737 |
| Number of pages | 5 |
| Journal | Solar Energy Materials and Solar Cells |
| Volume | 94 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 1 May 2010 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- Plasma
- Solar cells
- Texturing
- Thin films
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