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Plasma-Texturing Processes and a-Si:H Surface Passivation on c-Si Wafers for Photovoltaic Applications

  • D. Murias
  • , M. Moreno
  • , C. Reyes-Betanzo
  • , A. Torres
  • , R. Ambrosio
  • , P. Rosales
  • , J. Martínez
  • , I. Vivaldo
  • , P. Roca I Cabarrocas
  • Instituto Nacional de Astrofísica Óptica y Electrónica (INAOE)
  • Benemerita Universidad Autonoma de Puebla

Research output: Contribution to journalArticlepeer-review

Abstract

In this work, we report the formation of pyramidlike structures on crystalline silicon (c-Si) substrates using plasma-texturing processes, and also, we present optimized process conditions for the deposition of hydrogenated amorphous silicon in order to passivate low cost CZ c-Si wafers. A relatively high effective lifetime of minority carriers was measured on nontextured wafers. Our results demonstrate that plasma-texturing processes can produce similar results or even better than wet-texturing processes. Finally, combined plasma texturing and passivation at low temperature is a promising approach for the fabrication of low cost heterojunction solar cells in CZ c-Si substrates.

Original languageEnglish
Article number051010
JournalJournal of Solar Energy Engineering, Transactions of the ASME
Volume137
Issue number5
DOIs
Publication statusPublished - 1 Oct 2015

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

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