Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities

Daniele Bajoni; Pascale Senellart; Esther Wertz; Isabelle Sagnes; Audrey Miard; Aristide Lemaître; Jacqueline Bloch

doi:10.1103/PhysRevLett.100.047401

Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities

Daniele Bajoni, Pascale Senellart, Esther Wertz, Isabelle Sagnes, Audrey Miard, Aristide Lemaître, Jacqueline Bloch

Centre de Nanosciences et de Nanotechnologies

Research output: Contribution to journal › Article › peer-review

Abstract

Polariton lasing is demonstrated on the zero-dimensional states of single GaAs/GaAlAs micropillar cavities. Under nonresonant excitation, the measured polariton ground-state occupancy is found as large as 104. Changing the spatial excitation conditions, competition between several polariton lasing modes is observed, ruling out Bose-Einstein condensation. When the polariton state occupancy increases, the emission blueshift is the signature of self-interaction within the half-light half-matter polariton lasing mode.

Original language	English
Article number	047401
Journal	Physical Review Letters
Volume	100
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevLett.100.047401
Publication status	Published - 28 Jan 2008
Externally published	Yes

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10.1103/PhysRevLett.100.047401

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title = "Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities",

abstract = "Polariton lasing is demonstrated on the zero-dimensional states of single GaAs/GaAlAs micropillar cavities. Under nonresonant excitation, the measured polariton ground-state occupancy is found as large as 104. Changing the spatial excitation conditions, competition between several polariton lasing modes is observed, ruling out Bose-Einstein condensation. When the polariton state occupancy increases, the emission blueshift is the signature of self-interaction within the half-light half-matter polariton lasing mode.",

author = "Daniele Bajoni and Pascale Senellart and Esther Wertz and Isabelle Sagnes and Audrey Miard and Aristide Lema{\^i}tre and Jacqueline Bloch",

year = "2008",

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doi = "10.1103/PhysRevLett.100.047401",

language = "English",

volume = "100",

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T1 - Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities

AU - Bajoni, Daniele

AU - Senellart, Pascale

AU - Wertz, Esther

AU - Sagnes, Isabelle

AU - Miard, Audrey

AU - Lemaître, Aristide

AU - Bloch, Jacqueline

PY - 2008/1/28

Y1 - 2008/1/28

N2 - Polariton lasing is demonstrated on the zero-dimensional states of single GaAs/GaAlAs micropillar cavities. Under nonresonant excitation, the measured polariton ground-state occupancy is found as large as 104. Changing the spatial excitation conditions, competition between several polariton lasing modes is observed, ruling out Bose-Einstein condensation. When the polariton state occupancy increases, the emission blueshift is the signature of self-interaction within the half-light half-matter polariton lasing mode.

AB - Polariton lasing is demonstrated on the zero-dimensional states of single GaAs/GaAlAs micropillar cavities. Under nonresonant excitation, the measured polariton ground-state occupancy is found as large as 104. Changing the spatial excitation conditions, competition between several polariton lasing modes is observed, ruling out Bose-Einstein condensation. When the polariton state occupancy increases, the emission blueshift is the signature of self-interaction within the half-light half-matter polariton lasing mode.

U2 - 10.1103/PhysRevLett.100.047401

DO - 10.1103/PhysRevLett.100.047401

M3 - Article

AN - SCOPUS:38749133341

SN - 0031-9007

VL - 100

JO - Physical Review Letters

JF - Physical Review Letters

IS - 4

M1 - 047401

ER -

Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities

Abstract

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