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Polariton light-emitting diode in a GaAs-based microcavity

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Abstract

Cavity polaritons have been shown these last years to exhibit a rich variety of nonlinear behaviors which could be used in new polariton based devices. Operation in the strong coupling regime under electrical injection remains a key step toward a practical polariton device. We report here on the realization of a polariton based light-emitting diode using a GaAs microcavity with doped Bragg mirrors. Both photocurrent and electroluminescence spectra are governed by cavity polaritons up to 100 K.

Original languageEnglish
Article number113303
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume77
Issue number11
DOIs
Publication statusPublished - 5 Mar 2008

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