Polarization spectroscopy of modulated GaAs/GaAlAs quantum wells grown on vicinal surfaces: Anisotropic islands or ordered growth?

J. Bloch; U. Bockelmann; F. Laruelle

doi:10.1016/0038-1101(94)90239-9

Polarization spectroscopy of modulated GaAs/GaAlAs quantum wells grown on vicinal surfaces: Anisotropic islands or ordered growth?

J. Bloch
, U. Bockelmann
, F. Laruelle

École Polytechnique

Research output: Contribution to journal › Article › peer-review

Abstract

We have investigated the anisotropy of optical properties in quantum wells grown on vicinal surfaces and modulated by a fractional AlAs layer inserted in their middle. Photoluminescence linear polarization is systematically measured as a function of terrace length and of AlAs terrace coverage. Our results highlight the influence of anisotropic islands on optical properties.

Original language	English
Pages (from-to)	529-533
Number of pages	5
Journal	Solid-State Electronics
Volume	37
Issue number	4-6
DOIs	https://doi.org/10.1016/0038-1101(94)90239-9
Publication status	Published - 1 Jan 1994

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@article{2533511356234109a645936a78a4f576,

title = "Polarization spectroscopy of modulated GaAs/GaAlAs quantum wells grown on vicinal surfaces: Anisotropic islands or ordered growth?",

abstract = "We have investigated the anisotropy of optical properties in quantum wells grown on vicinal surfaces and modulated by a fractional AlAs layer inserted in their middle. Photoluminescence linear polarization is systematically measured as a function of terrace length and of AlAs terrace coverage. Our results highlight the influence of anisotropic islands on optical properties.",

author = "J. Bloch and U. Bockelmann and F. Laruelle",

year = "1994",

month = jan,

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doi = "10.1016/0038-1101(94)90239-9",

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T1 - Polarization spectroscopy of modulated GaAs/GaAlAs quantum wells grown on vicinal surfaces

T2 - Anisotropic islands or ordered growth?

AU - Bloch, J.

AU - Bockelmann, U.

AU - Laruelle, F.

PY - 1994/1/1

Y1 - 1994/1/1

N2 - We have investigated the anisotropy of optical properties in quantum wells grown on vicinal surfaces and modulated by a fractional AlAs layer inserted in their middle. Photoluminescence linear polarization is systematically measured as a function of terrace length and of AlAs terrace coverage. Our results highlight the influence of anisotropic islands on optical properties.

AB - We have investigated the anisotropy of optical properties in quantum wells grown on vicinal surfaces and modulated by a fractional AlAs layer inserted in their middle. Photoluminescence linear polarization is systematically measured as a function of terrace length and of AlAs terrace coverage. Our results highlight the influence of anisotropic islands on optical properties.

UR - https://www.scopus.com/pages/publications/0028406105

U2 - 10.1016/0038-1101(94)90239-9

DO - 10.1016/0038-1101(94)90239-9

M3 - Article

AN - SCOPUS:0028406105

SN - 0038-1101

VL - 37

SP - 529

EP - 533

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 4-6

ER -

Polarization spectroscopy of modulated GaAs/GaAlAs quantum wells grown on vicinal surfaces: Anisotropic islands or ordered growth?

Abstract

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