Polycrystalline silicon films on ceramic substrates by aluminium-induced crystallisation process

E. Pihan; A. Slaoui; A. Focsa; P. Roca i Cabarrocas

Polycrystalline silicon films on ceramic substrates by aluminium-induced crystallisation process

E. Pihan
, A. Slaoui
, A. Focsa
, P. Roca i Cabarrocas

Centre national de la recherche scientifique

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Growth of polycrystalline silicon layers on ceramic substrates using the aluminium induced crystallisation (AIC) process of amorphous silicon is presented. Alumina and mullite ceramics were used as substrates as well as thermally-oxidized silicon for comparison. We have found a faster layer exchange process and therefore smaller grains in the final continuous poly-Si seed film on mullite and alumina. Raman spectroscopy confirmed the high crystalline quality of this AIC layer. Silicon epitaxy on the AIC seed layers by high temperature CVD is also reported, thanks to the ceramic substrate.

Original language	English
Title of host publication	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Editors	K. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages	1182-1185
Number of pages	4
Publication status	Published - 1 Dec 2003
Event	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan Duration: 11 May 2003 → 18 May 2003

Publication series

Name	Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion
Volume	B

Conference

Conference	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Country/Territory	Japan
City	Osaka
Period	11/05/03 → 18/05/03

Cite this

Pihan, E., Slaoui, A., Focsa, A., & Roca i Cabarrocas, P. (2003). Polycrystalline silicon films on ceramic substrates by aluminium-induced crystallisation process. In K. Kurokawa, L. L. Kazmerski, B. McNeils, M. Yamaguchi, & C. Wronski (Eds.), Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion (pp. 1182-1185). (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Vol. B).

Pihan, E. ; Slaoui, A. ; Focsa, A. et al. / Polycrystalline silicon films on ceramic substrates by aluminium-induced crystallisation process. Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. editor / K. Kurokawa ; L.L. Kazmerski ; B. McNeils ; M. Yamaguchi ; C. Wronski. 2003. pp. 1182-1185 (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion).

@inproceedings{85c81845802d4345864a2f5f28d0f6e5,

title = "Polycrystalline silicon films on ceramic substrates by aluminium-induced crystallisation process",

abstract = "Growth of polycrystalline silicon layers on ceramic substrates using the aluminium induced crystallisation (AIC) process of amorphous silicon is presented. Alumina and mullite ceramics were used as substrates as well as thermally-oxidized silicon for comparison. We have found a faster layer exchange process and therefore smaller grains in the final continuous poly-Si seed film on mullite and alumina. Raman spectroscopy confirmed the high crystalline quality of this AIC layer. Silicon epitaxy on the AIC seed layers by high temperature CVD is also reported, thanks to the ceramic substrate.",

author = "E. Pihan and A. Slaoui and A. Focsa and \{Roca i Cabarrocas\}, P.",

year = "2003",

month = dec,

day = "1",

language = "English",

isbn = "4990181603",

series = "Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion",

pages = "1182--1185",

editor = "K. Kurokawa and L.L. Kazmerski and B. McNeils and M. Yamaguchi and C. Wronski",

booktitle = "Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion",

note = "Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion ; Conference date: 11-05-2003 Through 18-05-2003",

}

Pihan, E, Slaoui, A, Focsa, A & Roca i Cabarrocas, P 2003, Polycrystalline silicon films on ceramic substrates by aluminium-induced crystallisation process. in K Kurokawa, LL Kazmerski, B McNeils, M Yamaguchi & C Wronski (eds), Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion, vol. B, pp. 1182-1185, Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, 11/05/03.

Polycrystalline silicon films on ceramic substrates by aluminium-induced crystallisation process. / Pihan, E.; Slaoui, A.; Focsa, A. et al.
Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. ed. / K. Kurokawa; L.L. Kazmerski; B. McNeils; M. Yamaguchi; C. Wronski. 2003. p. 1182-1185 (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Vol. B).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Polycrystalline silicon films on ceramic substrates by aluminium-induced crystallisation process

AU - Pihan, E.

AU - Slaoui, A.

AU - Focsa, A.

AU - Roca i Cabarrocas, P.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - Growth of polycrystalline silicon layers on ceramic substrates using the aluminium induced crystallisation (AIC) process of amorphous silicon is presented. Alumina and mullite ceramics were used as substrates as well as thermally-oxidized silicon for comparison. We have found a faster layer exchange process and therefore smaller grains in the final continuous poly-Si seed film on mullite and alumina. Raman spectroscopy confirmed the high crystalline quality of this AIC layer. Silicon epitaxy on the AIC seed layers by high temperature CVD is also reported, thanks to the ceramic substrate.

AB - Growth of polycrystalline silicon layers on ceramic substrates using the aluminium induced crystallisation (AIC) process of amorphous silicon is presented. Alumina and mullite ceramics were used as substrates as well as thermally-oxidized silicon for comparison. We have found a faster layer exchange process and therefore smaller grains in the final continuous poly-Si seed film on mullite and alumina. Raman spectroscopy confirmed the high crystalline quality of this AIC layer. Silicon epitaxy on the AIC seed layers by high temperature CVD is also reported, thanks to the ceramic substrate.

M3 - Conference contribution

AN - SCOPUS:6344221800

SN - 4990181603

SN - 9784990181604

T3 - Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion

SP - 1182

EP - 1185

BT - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion

A2 - Kurokawa, K.

A2 - Kazmerski, L.L.

A2 - McNeils, B.

A2 - Yamaguchi, M.

A2 - Wronski, C.

T2 - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion

Y2 - 11 May 2003 through 18 May 2003

ER -

Pihan E, Slaoui A, Focsa A, Roca i Cabarrocas P. Polycrystalline silicon films on ceramic substrates by aluminium-induced crystallisation process. In Kurokawa K, Kazmerski LL, McNeils B, Yamaguchi M, Wronski C, editors, Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. 2003. p. 1182-1185. (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion).

Polycrystalline silicon films on ceramic substrates by aluminium-induced crystallisation process

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