Polymorphous silicon: A promising material for thin-film transistors for low-cost and high-performance active-matrix OLED displays

François Templier; Julien Brochet; Bernard Aventurier; David Cooper; Alexey Abramov; Dmitri Daineka; Pere Roca I Cabarrocas

doi:10.1587/transele.E93.C.1490

Polymorphous silicon: A promising material for thin-film transistors for low-cost and high-performance active-matrix OLED displays

François Templier
, Julien Brochet
, Bernard Aventurier
, David Cooper
, Alexey Abramov
, Dmitri Daineka
, Pere Roca I Cabarrocas

LETI (CEA-Technologies Avancees)
Institut polytechnique de Paris

Research output: Contribution to journal › Article › peer-review

Abstract

Hydrogenated polymorphous Silicon allows to fabricate TFTs with very interesting characteristics including better threshold voltage stability than a-Si TFTs, lower leakage current than μ-Si:H TFTs and excellent uniformity. Investigation of threshold voltage shift mechanisms of pm-Si:H TFTs has shown a specific semiconductor material degradation with different activation energies compared to a-Si:H TFTs. TEM analysis has evidenced for the first time a significant structural difference between pm-Si:H and a-Si:H materials, in the TFT device configuration. Pm-Si:H appears to be very suitable for low cost and high performance AM-OLED fabrication.

Original language	English
Pages (from-to)	1490-1494
Number of pages	5
Journal	IEICE Transactions on Electronics
Volume	E93-C
Issue number	10
DOIs	https://doi.org/10.1587/transele.E93.C.1490
Publication status	Published - 1 Jan 2010

Keywords

OLED
Polymorphous
Silicon
Thin-film transistors

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10.1587/transele.E93.C.1490

Cite this

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abstract = "Hydrogenated polymorphous Silicon allows to fabricate TFTs with very interesting characteristics including better threshold voltage stability than a-Si TFTs, lower leakage current than μ-Si:H TFTs and excellent uniformity. Investigation of threshold voltage shift mechanisms of pm-Si:H TFTs has shown a specific semiconductor material degradation with different activation energies compared to a-Si:H TFTs. TEM analysis has evidenced for the first time a significant structural difference between pm-Si:H and a-Si:H materials, in the TFT device configuration. Pm-Si:H appears to be very suitable for low cost and high performance AM-OLED fabrication.",

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AU - Templier, François

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AU - Aventurier, Bernard

AU - Cooper, David

AU - Abramov, Alexey

AU - Daineka, Dmitri

AU - Roca I Cabarrocas, Pere

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AB - Hydrogenated polymorphous Silicon allows to fabricate TFTs with very interesting characteristics including better threshold voltage stability than a-Si TFTs, lower leakage current than μ-Si:H TFTs and excellent uniformity. Investigation of threshold voltage shift mechanisms of pm-Si:H TFTs has shown a specific semiconductor material degradation with different activation energies compared to a-Si:H TFTs. TEM analysis has evidenced for the first time a significant structural difference between pm-Si:H and a-Si:H materials, in the TFT device configuration. Pm-Si:H appears to be very suitable for low cost and high performance AM-OLED fabrication.

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KW - Silicon

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Polymorphous silicon: A promising material for thin-film transistors for low-cost and high-performance active-matrix OLED displays

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Keywords

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