Polymorphous silicon thin films deposited at high rate: Transport properties and density of states

Y. M. Soro; A. Abramov; M. E. Gueunier-Farret; E. V. Johnson; C. Longeaud; P. Roca i Cabarrocas; J. P. Kleider

doi:10.1016/j.tsf.2007.12.123

Polymorphous silicon thin films deposited at high rate: Transport properties and density of states

Y. M. Soro
, A. Abramov
, M. E. Gueunier-Farret
, E. V. Johnson
, C. Longeaud
, P. Roca i Cabarrocas
, J. P. Kleider

Université Paris-Sud 11
Institut polytechnique de Paris
Ioffe Institute

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Hydrogenated polymorphous silicon (pm-Si:H) films were fabricated by conventional RF plasma enhanced chemical vapour deposition at high deposition rate (~ 8 Å/s). The details of DOS distribution in the whole mobility gap and transport properties of both types of carriers were studied using a set of complementary techniques before and after light-soaking. The results show that these properties are similar to those of standard a-Si:H, or even can exceed them, at least for diffusion length in both states before and after light-soaking.

Original language	English
Pages (from-to)	6888-6891
Number of pages	4
Journal	Thin Solid Films
Volume	516
Issue number	20
DOIs	https://doi.org/10.1016/j.tsf.2007.12.123
Publication status	Published - 30 Aug 2008

Keywords

Defects
High deposition rate
Polymorphous silicon
Transport properties

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10.1016/j.tsf.2007.12.123

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@article{c412bccbddf74ed1b348301b5674521a,

title = "Polymorphous silicon thin films deposited at high rate: Transport properties and density of states",

abstract = "Hydrogenated polymorphous silicon (pm-Si:H) films were fabricated by conventional RF plasma enhanced chemical vapour deposition at high deposition rate (\textasciitilde{} 8 {\AA}/s). The details of DOS distribution in the whole mobility gap and transport properties of both types of carriers were studied using a set of complementary techniques before and after light-soaking. The results show that these properties are similar to those of standard a-Si:H, or even can exceed them, at least for diffusion length in both states before and after light-soaking.",

keywords = "Defects, High deposition rate, Polymorphous silicon, Transport properties",

author = "Soro, \{Y. M.\} and A. Abramov and Gueunier-Farret, \{M. E.\} and Johnson, \{E. V.\} and C. Longeaud and \{Roca i Cabarrocas\}, P. and Kleider, \{J. P.\}",

year = "2008",

month = aug,

day = "30",

doi = "10.1016/j.tsf.2007.12.123",

language = "English",

volume = "516",

pages = "6888--6891",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "20",

}

TY - JOUR

T1 - Polymorphous silicon thin films deposited at high rate

T2 - Transport properties and density of states

AU - Soro, Y. M.

AU - Abramov, A.

AU - Gueunier-Farret, M. E.

AU - Johnson, E. V.

AU - Longeaud, C.

AU - Roca i Cabarrocas, P.

AU - Kleider, J. P.

PY - 2008/8/30

Y1 - 2008/8/30

N2 - Hydrogenated polymorphous silicon (pm-Si:H) films were fabricated by conventional RF plasma enhanced chemical vapour deposition at high deposition rate (~ 8 Å/s). The details of DOS distribution in the whole mobility gap and transport properties of both types of carriers were studied using a set of complementary techniques before and after light-soaking. The results show that these properties are similar to those of standard a-Si:H, or even can exceed them, at least for diffusion length in both states before and after light-soaking.

AB - Hydrogenated polymorphous silicon (pm-Si:H) films were fabricated by conventional RF plasma enhanced chemical vapour deposition at high deposition rate (~ 8 Å/s). The details of DOS distribution in the whole mobility gap and transport properties of both types of carriers were studied using a set of complementary techniques before and after light-soaking. The results show that these properties are similar to those of standard a-Si:H, or even can exceed them, at least for diffusion length in both states before and after light-soaking.

KW - Defects

KW - High deposition rate

KW - Polymorphous silicon

KW - Transport properties

U2 - 10.1016/j.tsf.2007.12.123

DO - 10.1016/j.tsf.2007.12.123

M3 - Article

AN - SCOPUS:45949106836

SN - 0040-6090

VL - 516

SP - 6888

EP - 6891

JO - Thin Solid Films

JF - Thin Solid Films

IS - 20

ER -

Polymorphous silicon thin films deposited at high rate: Transport properties and density of states

Abstract

Keywords

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