TY - JOUR
T1 - Polymorphous silicon thin films produced in dusty plasmas
T2 - Application to solar cells
AU - Cabarrocas, Pere Roca I.
AU - Chaâbane, N.
AU - Kharchenko, A. V.
AU - Tchakarov, S.
PY - 2004/12/1
Y1 - 2004/12/1
N2 - We summarize our current understanding of the optimization of PIN solar cells produced by plasma enhanced chemical vapour deposition from silane-hydrogen mixtures. To increase the deposition rate, the discharge is operated under plasma conditions close to powder formation, where silicon nanocrystals contribute to the deposition of so-called polymorphous silicon thin films. We show that the increase in deposition rate can be achieved via an accurate control of the plasma parameters. However, this also results in a highly defective interface in the solar cells due to the bombardment of the P-layer by positively charged nanocrystals during the deposition of the I-layer. We show that decreasing the ion energy by increasing the total pressure or by using silane-helium mixtures allows us to increase both the deposition rate and the solar cells efficiency, as required for cost effective thin film photovoltaics.
AB - We summarize our current understanding of the optimization of PIN solar cells produced by plasma enhanced chemical vapour deposition from silane-hydrogen mixtures. To increase the deposition rate, the discharge is operated under plasma conditions close to powder formation, where silicon nanocrystals contribute to the deposition of so-called polymorphous silicon thin films. We show that the increase in deposition rate can be achieved via an accurate control of the plasma parameters. However, this also results in a highly defective interface in the solar cells due to the bombardment of the P-layer by positively charged nanocrystals during the deposition of the I-layer. We show that decreasing the ion energy by increasing the total pressure or by using silane-helium mixtures allows us to increase both the deposition rate and the solar cells efficiency, as required for cost effective thin film photovoltaics.
U2 - 10.1088/0741-3335/46/12B/020
DO - 10.1088/0741-3335/46/12B/020
M3 - Article
AN - SCOPUS:12844256980
SN - 0741-3335
VL - 46
SP - B235-B243
JO - Plasma Physics and Controlled Fusion
JF - Plasma Physics and Controlled Fusion
IS - 12 B
ER -