Positon annihilation at vacancies in Hg0.8Cd0.2Te crystals after electron irradiation

F. M. Kiessling; C. Corbel; L. Baroux; S. Rolland; R. Triboulet

doi:10.1103/PhysRevB.52.9925

Positon annihilation at vacancies in Hg0.8Cd0.2Te crystals after electron irradiation

F. M. Kiessling
, C. Corbel
, L. Baroux
, S. Rolland
, R. Triboulet

Institut National des Sciences et Techniques Nucléaires
Centre national de la recherche scientifique

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Acceptors and vacancy-type defects have been investigated in traveling-heater-method-grown Hg0.8Cd0.2Te crystals by measuring the positron lifetime after 2.5-MeV electron irradiation in liquid hydrogen and annealing from 77 to 340 K. The results give evidence that negative VHg vacancies are introduced. They disappear slowly at room temperature over several weeks. Another monovacancy is also observed when the Fermi level is high in the gap. It is tentatively identified with the VTe vacancy. A recovery stage is observed between 150 and 280 K, the nature of which is discussed.

Original language	English
Pages (from-to)	9925-9931
Number of pages	7
Journal	Physical Review B
Volume	52
Issue number	14
DOIs	https://doi.org/10.1103/PhysRevB.52.9925
Publication status	Published - 1 Jan 1995
Externally published	Yes

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title = "Positon annihilation at vacancies in Hg0.8Cd0.2Te crystals after electron irradiation",

abstract = "Acceptors and vacancy-type defects have been investigated in traveling-heater-method-grown Hg0.8Cd0.2Te crystals by measuring the positron lifetime after 2.5-MeV electron irradiation in liquid hydrogen and annealing from 77 to 340 K. The results give evidence that negative VHg vacancies are introduced. They disappear slowly at room temperature over several weeks. Another monovacancy is also observed when the Fermi level is high in the gap. It is tentatively identified with the VTe vacancy. A recovery stage is observed between 150 and 280 K, the nature of which is discussed.",

author = "Kiessling, \{F. M.\} and C. Corbel and L. Baroux and S. Rolland and R. Triboulet",

year = "1995",

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doi = "10.1103/PhysRevB.52.9925",

language = "English",

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T1 - Positon annihilation at vacancies in Hg0.8Cd0.2Te crystals after electron irradiation

AU - Kiessling, F. M.

AU - Corbel, C.

AU - Baroux, L.

AU - Rolland, S.

AU - Triboulet, R.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - Acceptors and vacancy-type defects have been investigated in traveling-heater-method-grown Hg0.8Cd0.2Te crystals by measuring the positron lifetime after 2.5-MeV electron irradiation in liquid hydrogen and annealing from 77 to 340 K. The results give evidence that negative VHg vacancies are introduced. They disappear slowly at room temperature over several weeks. Another monovacancy is also observed when the Fermi level is high in the gap. It is tentatively identified with the VTe vacancy. A recovery stage is observed between 150 and 280 K, the nature of which is discussed.

AB - Acceptors and vacancy-type defects have been investigated in traveling-heater-method-grown Hg0.8Cd0.2Te crystals by measuring the positron lifetime after 2.5-MeV electron irradiation in liquid hydrogen and annealing from 77 to 340 K. The results give evidence that negative VHg vacancies are introduced. They disappear slowly at room temperature over several weeks. Another monovacancy is also observed when the Fermi level is high in the gap. It is tentatively identified with the VTe vacancy. A recovery stage is observed between 150 and 280 K, the nature of which is discussed.

U2 - 10.1103/PhysRevB.52.9925

DO - 10.1103/PhysRevB.52.9925

M3 - Article

AN - SCOPUS:3643104621

SN - 0163-1829

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SP - 9925

EP - 9931

JO - Physical Review B

JF - Physical Review B

IS - 14

ER -

Positon annihilation at vacancies in Hg0.8Cd0.2Te crystals after electron irradiation

Abstract

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