Positron annihilation and charge state of the vacancies in as-grown and electron irradiated GaAs

C. Corbel

doi:10.1016/0168-583X(92)95189-X

Positron annihilation and charge state of the vacancies in as-grown and electron irradiated GaAs

C. Corbel

Institut Pierre Simon Laplace, CNRS and CEA

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We use positron lifetime studies performed in GaAs materials to show the defect properties which can be investigated by implanting positive positrons in semiconductors. The studies concern native and electron irradiation induced defects. These studies show that vacancy charge state and vacancy ionization levels can be determined from positron annihilation. They show also that positrons are trapped by negative ions and give information on their concentration.

Original language	English
Pages (from-to)	166-172
Number of pages	7
Journal	Nuclear Inst. and Methods in Physics Research, B
Volume	63
Issue number	1-2
DOIs	https://doi.org/10.1016/0168-583X(92)95189-X
Publication status	Published - 1 Jan 1992
Externally published	Yes

Access to Document

10.1016/0168-583X(92)95189-X

Cite this

@article{40c2374344c84651831d4e231848950f,

title = "Positron annihilation and charge state of the vacancies in as-grown and electron irradiated GaAs",

abstract = "We use positron lifetime studies performed in GaAs materials to show the defect properties which can be investigated by implanting positive positrons in semiconductors. The studies concern native and electron irradiation induced defects. These studies show that vacancy charge state and vacancy ionization levels can be determined from positron annihilation. They show also that positrons are trapped by negative ions and give information on their concentration.",

author = "C. Corbel",

year = "1992",

month = jan,

day = "1",

doi = "10.1016/0168-583X(92)95189-X",

language = "English",

volume = "63",

pages = "166--172",

journal = "Nuclear Inst. and Methods in Physics Research, B",

issn = "0168-583X",

number = "1-2",

}

TY - JOUR

T1 - Positron annihilation and charge state of the vacancies in as-grown and electron irradiated GaAs

AU - Corbel, C.

PY - 1992/1/1

Y1 - 1992/1/1

N2 - We use positron lifetime studies performed in GaAs materials to show the defect properties which can be investigated by implanting positive positrons in semiconductors. The studies concern native and electron irradiation induced defects. These studies show that vacancy charge state and vacancy ionization levels can be determined from positron annihilation. They show also that positrons are trapped by negative ions and give information on their concentration.

AB - We use positron lifetime studies performed in GaAs materials to show the defect properties which can be investigated by implanting positive positrons in semiconductors. The studies concern native and electron irradiation induced defects. These studies show that vacancy charge state and vacancy ionization levels can be determined from positron annihilation. They show also that positrons are trapped by negative ions and give information on their concentration.

U2 - 10.1016/0168-583X(92)95189-X

DO - 10.1016/0168-583X(92)95189-X

M3 - Article

AN - SCOPUS:4243330499

SN - 0168-583X

VL - 63

SP - 166

EP - 172

JO - Nuclear Inst. and Methods in Physics Research, B

JF - Nuclear Inst. and Methods in Physics Research, B

IS - 1-2

ER -

Positron annihilation and charge state of the vacancies in as-grown and electron irradiated GaAs

Abstract

Access to Document

Fingerprint

Cite this