Positron annihilation at proton-induced defects in 6H-SiC/SiC and 6H-SiC/SiO2/Si structures

M. F. Barthe; L. Henry; C. Corbel; G. Blondiaux; K. Saarinen; P. Hautojärvi; E. Hugonnard; L. Di Cioccio; F. Letertre; B. Ghyselen

doi:10.1103/PhysRevB.62.16638

Positron annihilation at proton-induced defects in 6H-SiC/SiC and 6H-SiC/SiO₂/Si structures

M. F. Barthe, L. Henry, C. Corbel, G. Blondiaux, K. Saarinen, P. Hautojärvi, E. Hugonnard, L. Di Cioccio, F. Letertre, B. Ghyselen

Research output: Contribution to journal › Article › peer-review

Abstract

Positron annihilation is used to detect vacancy-related defects in proton-implanted and Smart Cut 6H-SiC. The measurement of positron-electron pair momentum distribution as a function of depth shows that vacancy-related defects produced along the proton track and cavities formed in the region of the hydrogen peak survive in smart cut 6H-SiC even after 1300 °C annealing.

Original language	English
Pages (from-to)	16638-16644
Number of pages	7
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	62
Issue number	24
DOIs	https://doi.org/10.1103/PhysRevB.62.16638
Publication status	Published - 15 Dec 2000

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10.1103/PhysRevB.62.16638

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title = "Positron annihilation at proton-induced defects in 6H-SiC/SiC and 6H-SiC/SiO2/Si structures",

abstract = "Positron annihilation is used to detect vacancy-related defects in proton-implanted and Smart Cut 6H-SiC. The measurement of positron-electron pair momentum distribution as a function of depth shows that vacancy-related defects produced along the proton track and cavities formed in the region of the hydrogen peak survive in smart cut 6H-SiC even after 1300 °C annealing.",

author = "Barthe, \{M. F.\} and L. Henry and C. Corbel and G. Blondiaux and K. Saarinen and P. Hautoj{\"a}rvi and E. Hugonnard and \{Di Cioccio\}, L. and F. Letertre and B. Ghyselen",

year = "2000",

month = dec,

day = "15",

doi = "10.1103/PhysRevB.62.16638",

language = "English",

volume = "62",

pages = "16638--16644",

journal = "Physical Review B - Condensed Matter and Materials Physics",

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TY - JOUR

T1 - Positron annihilation at proton-induced defects in 6H-SiC/SiC and 6H-SiC/SiO2/Si structures

AU - Barthe, M. F.

AU - Henry, L.

AU - Corbel, C.

AU - Blondiaux, G.

AU - Saarinen, K.

AU - Hautojärvi, P.

AU - Hugonnard, E.

AU - Di Cioccio, L.

AU - Letertre, F.

AU - Ghyselen, B.

PY - 2000/12/15

Y1 - 2000/12/15

N2 - Positron annihilation is used to detect vacancy-related defects in proton-implanted and Smart Cut 6H-SiC. The measurement of positron-electron pair momentum distribution as a function of depth shows that vacancy-related defects produced along the proton track and cavities formed in the region of the hydrogen peak survive in smart cut 6H-SiC even after 1300 °C annealing.

AB - Positron annihilation is used to detect vacancy-related defects in proton-implanted and Smart Cut 6H-SiC. The measurement of positron-electron pair momentum distribution as a function of depth shows that vacancy-related defects produced along the proton track and cavities formed in the region of the hydrogen peak survive in smart cut 6H-SiC even after 1300 °C annealing.

U2 - 10.1103/PhysRevB.62.16638

DO - 10.1103/PhysRevB.62.16638

M3 - Article

AN - SCOPUS:0034670910

SN - 1098-0121

VL - 62

SP - 16638

EP - 16644

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 24

ER -

Positron annihilation at proton-induced defects in 6H-SiC/SiC and 6H-SiC/SiO2/Si structures

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Positron annihilation at proton-induced defects in 6H-SiC/SiC and 6H-SiC/SiO₂/Si structures