Positron annihilation characteristics in UO2: For lattice and vacancy defects induced by electron irradiation

M. F. Barthe; H. Labrim; A. Gentils; P. Desgardin; C. Corbel; S. Esnouf; J. P. Piron

doi:10.1002/pssc.200675752

Positron annihilation characteristics in UO₂: For lattice and vacancy defects induced by electron irradiation

M. F. Barthe
, H. Labrim
, A. Gentils
, P. Desgardin
, C. Corbel
, S. Esnouf
, J. P. Piron

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this work, both 22Na based positron lifetime spectroscopy (PALS) and slow positron beam based Doppler annihilation-ray broadening spectrometry (SPBDB) have been used to characterize respectively the bulk and the first micron under the surface of sintered UO₂ disks that have been polished and annealed at high temperature (1700 °C/24 h/ArH₂). Results show the presence of negative ions that are tentatively identified to negatively charged oxygen atoms located in interstitial sites. The positron annihilation characteristics in the UO₂ lattice have been determined and are equal to S_L(UO₂) = 0.371(5), W_L(UO ₂) = 0.078(7), τ_L(UO₂) = 169 ± 1 ps. Such disks have been irradiated at room temperature with electrons and a particles at different fluences. After irradiation, SPBDB and PALS measurements show the formation of U-related vacancy defects after a 2.5 MeV electrons irradiation whereas no defects are detected for an irradiation at 1 MeV.

Original language	English
Pages (from-to)	3627-3632
Number of pages	6
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	4
Issue number	10
DOIs	https://doi.org/10.1002/pssc.200675752
Publication status	Published - 1 Dec 2007
Event	14th International Conference on Positron Annihilation, ICPA 14 - Hamilton, ON, Canada Duration: 23 Jul 2006 → 28 Jul 2006

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@article{5c28e771e57143db854128df9f7e5901,

title = "Positron annihilation characteristics in UO2: For lattice and vacancy defects induced by electron irradiation",

abstract = "In this work, both 22Na based positron lifetime spectroscopy (PALS) and slow positron beam based Doppler annihilation-ray broadening spectrometry (SPBDB) have been used to characterize respectively the bulk and the first micron under the surface of sintered UO2 disks that have been polished and annealed at high temperature (1700 °C/24 h/ArH2). Results show the presence of negative ions that are tentatively identified to negatively charged oxygen atoms located in interstitial sites. The positron annihilation characteristics in the UO2 lattice have been determined and are equal to SL(UO2) = 0.371(5), WL(UO 2) = 0.078(7), τL(UO2) = 169 ± 1 ps. Such disks have been irradiated at room temperature with electrons and a particles at different fluences. After irradiation, SPBDB and PALS measurements show the formation of U-related vacancy defects after a 2.5 MeV electrons irradiation whereas no defects are detected for an irradiation at 1 MeV.",

author = "Barthe, \{M. F.\} and H. Labrim and A. Gentils and P. Desgardin and C. Corbel and S. Esnouf and Piron, \{J. P.\}",

year = "2007",

month = dec,

day = "1",

doi = "10.1002/pssc.200675752",

language = "English",

volume = "4",

pages = "3627--3632",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

number = "10",

note = "14th International Conference on Positron Annihilation, ICPA 14 ; Conference date: 23-07-2006 Through 28-07-2006",

}

TY - JOUR

T1 - Positron annihilation characteristics in UO2

T2 - 14th International Conference on Positron Annihilation, ICPA 14

AU - Barthe, M. F.

AU - Labrim, H.

AU - Gentils, A.

AU - Desgardin, P.

AU - Corbel, C.

AU - Esnouf, S.

AU - Piron, J. P.

PY - 2007/12/1

Y1 - 2007/12/1

N2 - In this work, both 22Na based positron lifetime spectroscopy (PALS) and slow positron beam based Doppler annihilation-ray broadening spectrometry (SPBDB) have been used to characterize respectively the bulk and the first micron under the surface of sintered UO2 disks that have been polished and annealed at high temperature (1700 °C/24 h/ArH2). Results show the presence of negative ions that are tentatively identified to negatively charged oxygen atoms located in interstitial sites. The positron annihilation characteristics in the UO2 lattice have been determined and are equal to SL(UO2) = 0.371(5), WL(UO 2) = 0.078(7), τL(UO2) = 169 ± 1 ps. Such disks have been irradiated at room temperature with electrons and a particles at different fluences. After irradiation, SPBDB and PALS measurements show the formation of U-related vacancy defects after a 2.5 MeV electrons irradiation whereas no defects are detected for an irradiation at 1 MeV.

AB - In this work, both 22Na based positron lifetime spectroscopy (PALS) and slow positron beam based Doppler annihilation-ray broadening spectrometry (SPBDB) have been used to characterize respectively the bulk and the first micron under the surface of sintered UO2 disks that have been polished and annealed at high temperature (1700 °C/24 h/ArH2). Results show the presence of negative ions that are tentatively identified to negatively charged oxygen atoms located in interstitial sites. The positron annihilation characteristics in the UO2 lattice have been determined and are equal to SL(UO2) = 0.371(5), WL(UO 2) = 0.078(7), τL(UO2) = 169 ± 1 ps. Such disks have been irradiated at room temperature with electrons and a particles at different fluences. After irradiation, SPBDB and PALS measurements show the formation of U-related vacancy defects after a 2.5 MeV electrons irradiation whereas no defects are detected for an irradiation at 1 MeV.

UR - https://www.scopus.com/pages/publications/49949094791

U2 - 10.1002/pssc.200675752

DO - 10.1002/pssc.200675752

M3 - Conference article

AN - SCOPUS:49949094791

SN - 1862-6351

VL - 4

SP - 3627

EP - 3632

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 10

Y2 - 23 July 2006 through 28 July 2006

ER -

Positron annihilation characteristics in UO₂: For lattice and vacancy defects induced by electron irradiation

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