Positron annihilation in ZnSe layers grown on GaAs: Zinc vacancies and drift in the electric field at the ZnSe/GaAs interface

L. Liszkay; C. Corbel; P. Hautojärvi; R. Aulombard; T. Cloître; J. Griesche; F. Kiessling

doi:10.1063/1.119004

Positron annihilation in ZnSe layers grown on GaAs: Zinc vacancies and drift in the electric field at the ZnSe/GaAs interface

L. Liszkay
, C. Corbel
, P. Hautojärvi
, R. Aulombard
, T. Cloître
, J. Griesche
, F. Kiessling

Laboratory of Physics
Aalto University
Wigner Research Centre for Physics
Laboratoire Charles Coulomb
Department of Physics
Humboldt-Universität zu Berlin

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We used a slow positron beam to investigate the depth dependence of the positron-electron pair momentum distribution in ZnSe layers grown on a GaAs substrate. We report evidence that positrons annihilate in lattice in undoped ZnSe and at vacancies in heavily n-type ZnSe. It is also demonstrated that positrons in semi-insulating ZnSe are drifted to GaAs by fields of 1-3 kV/cm.

Original language	English
Pages (from-to)	2723-2725
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	20
DOIs	https://doi.org/10.1063/1.119004
Publication status	Published - 19 May 1997
Externally published	Yes

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10.1063/1.119004

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title = "Positron annihilation in ZnSe layers grown on GaAs: Zinc vacancies and drift in the electric field at the ZnSe/GaAs interface",

abstract = "We used a slow positron beam to investigate the depth dependence of the positron-electron pair momentum distribution in ZnSe layers grown on a GaAs substrate. We report evidence that positrons annihilate in lattice in undoped ZnSe and at vacancies in heavily n-type ZnSe. It is also demonstrated that positrons in semi-insulating ZnSe are drifted to GaAs by fields of 1-3 kV/cm.",

author = "L. Liszkay and C. Corbel and P. Hautoj{\"a}rvi and R. Aulombard and T. Clo{\^i}tre and J. Griesche and F. Kiessling",

year = "1997",

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T1 - Positron annihilation in ZnSe layers grown on GaAs

T2 - Zinc vacancies and drift in the electric field at the ZnSe/GaAs interface

AU - Liszkay, L.

AU - Corbel, C.

AU - Hautojärvi, P.

AU - Aulombard, R.

AU - Cloître, T.

AU - Griesche, J.

AU - Kiessling, F.

PY - 1997/5/19

Y1 - 1997/5/19

N2 - We used a slow positron beam to investigate the depth dependence of the positron-electron pair momentum distribution in ZnSe layers grown on a GaAs substrate. We report evidence that positrons annihilate in lattice in undoped ZnSe and at vacancies in heavily n-type ZnSe. It is also demonstrated that positrons in semi-insulating ZnSe are drifted to GaAs by fields of 1-3 kV/cm.

AB - We used a slow positron beam to investigate the depth dependence of the positron-electron pair momentum distribution in ZnSe layers grown on a GaAs substrate. We report evidence that positrons annihilate in lattice in undoped ZnSe and at vacancies in heavily n-type ZnSe. It is also demonstrated that positrons in semi-insulating ZnSe are drifted to GaAs by fields of 1-3 kV/cm.

U2 - 10.1063/1.119004

DO - 10.1063/1.119004

M3 - Article

AN - SCOPUS:0001025156

SN - 0003-6951

VL - 70

SP - 2723

EP - 2725

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Positron annihilation in ZnSe layers grown on GaAs: Zinc vacancies and drift in the electric field at the ZnSe/GaAs interface

Abstract

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