Positron annihilation spectroscopy of vacancy-related defects in semiconductors

C. Corbel; K. Saarinen; P. Hautojärvi

doi:10.1016/0960-8974(92)90014-H

Positron annihilation spectroscopy of vacancy-related defects in semiconductors

C. Corbel
, K. Saarinen
, P. Hautojärvi

Institut Pierre Simon Laplace, CNRS and CEA

Research output: Contribution to journal › Article › peer-review

Abstract

We use positron lifetime studies of GaAs materials to discuss the defect properties which can be investigated by implanting positive positrons in semiconductors. The studies concern native and electron irradiation induced defects. The results show that vacancy charge state and vacancy ionization levels can be determined from positron annihilation. They show also that positrons are trapped by negative ions and give information on their concentration.

Original language	English
Pages (from-to)	241-256
Number of pages	16
Journal	Progress in Crystal Growth and Characterization of Materials
Volume	25
Issue number	4
DOIs	https://doi.org/10.1016/0960-8974(92)90014-H
Publication status	Published - 1 Jan 1992
Externally published	Yes

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title = "Positron annihilation spectroscopy of vacancy-related defects in semiconductors",

abstract = "We use positron lifetime studies of GaAs materials to discuss the defect properties which can be investigated by implanting positive positrons in semiconductors. The studies concern native and electron irradiation induced defects. The results show that vacancy charge state and vacancy ionization levels can be determined from positron annihilation. They show also that positrons are trapped by negative ions and give information on their concentration.",

author = "C. Corbel and K. Saarinen and P. Hautoj{\"a}rvi",

year = "1992",

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T1 - Positron annihilation spectroscopy of vacancy-related defects in semiconductors

AU - Corbel, C.

AU - Saarinen, K.

AU - Hautojärvi, P.

PY - 1992/1/1

Y1 - 1992/1/1

N2 - We use positron lifetime studies of GaAs materials to discuss the defect properties which can be investigated by implanting positive positrons in semiconductors. The studies concern native and electron irradiation induced defects. The results show that vacancy charge state and vacancy ionization levels can be determined from positron annihilation. They show also that positrons are trapped by negative ions and give information on their concentration.

AB - We use positron lifetime studies of GaAs materials to discuss the defect properties which can be investigated by implanting positive positrons in semiconductors. The studies concern native and electron irradiation induced defects. The results show that vacancy charge state and vacancy ionization levels can be determined from positron annihilation. They show also that positrons are trapped by negative ions and give information on their concentration.

U2 - 10.1016/0960-8974(92)90014-H

DO - 10.1016/0960-8974(92)90014-H

M3 - Article

AN - SCOPUS:44949269338

SN - 0960-8974

VL - 25

SP - 241

EP - 256

JO - Progress in Crystal Growth and Characterization of Materials

JF - Progress in Crystal Growth and Characterization of Materials

IS - 4

ER -

Positron annihilation spectroscopy of vacancy-related defects in semiconductors

Abstract

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