Positron lifetime measurements in as‐grown and electron irradiated InSb

A. Sen Gupta; P. Moser; C. Corbel; P. Hautojärvi

doi:10.1002/crat.2170230323

Positron lifetime measurements in as‐grown and electron irradiated InSb

A. Sen Gupta
, P. Moser
, C. Corbel
, P. Hautojärvi

Univ. Joseph Fourier-Grenoble 1
Institut Pierre Simon Laplace, CNRS and CEA
Aalto University

Research output: Contribution to journal › Article › peer-review

Abstract

Positron lifetime in an as‐grown InSb crystal is measured to be 282 ± 2 ps. Irradiation by 3 MeV electrons at 20 K to the dose 4 × 10¹⁸ e⁻/cm² increases the lifetime by 8 ps. The irradiation‐induced vacancy‐defects recover until 350 K with a sharper annealing stage at 250 K–350 K.

Original language	English
Pages (from-to)	409-412
Number of pages	4
Journal	Crystal Research and Technology
Volume	23
Issue number	3
DOIs	https://doi.org/10.1002/crat.2170230323
Publication status	Published - 1 Jan 1988
Externally published	Yes

Access to Document

10.1002/crat.2170230323

Cite this

@article{bd1fa6c018c440b7b11c53b5021be63f,

title = "Positron lifetime measurements in as‐grown and electron irradiated InSb",

abstract = "Positron lifetime in an as‐grown InSb crystal is measured to be 282 ± 2 ps. Irradiation by 3 MeV electrons at 20 K to the dose 4 × 1018 e−/cm2 increases the lifetime by 8 ps. The irradiation‐induced vacancy‐defects recover until 350 K with a sharper annealing stage at 250 K–350 K.",

author = "\{Sen Gupta\}, A. and P. Moser and C. Corbel and P. Hautoj{\"a}rvi",

year = "1988",

month = jan,

day = "1",

doi = "10.1002/crat.2170230323",

language = "English",

volume = "23",

pages = "409--412",

journal = "Crystal Research and Technology",

issn = "0232-1300",

number = "3",

}

TY - JOUR

T1 - Positron lifetime measurements in as‐grown and electron irradiated InSb

AU - Sen Gupta, A.

AU - Moser, P.

AU - Corbel, C.

AU - Hautojärvi, P.

PY - 1988/1/1

Y1 - 1988/1/1

N2 - Positron lifetime in an as‐grown InSb crystal is measured to be 282 ± 2 ps. Irradiation by 3 MeV electrons at 20 K to the dose 4 × 1018 e−/cm2 increases the lifetime by 8 ps. The irradiation‐induced vacancy‐defects recover until 350 K with a sharper annealing stage at 250 K–350 K.

AB - Positron lifetime in an as‐grown InSb crystal is measured to be 282 ± 2 ps. Irradiation by 3 MeV electrons at 20 K to the dose 4 × 1018 e−/cm2 increases the lifetime by 8 ps. The irradiation‐induced vacancy‐defects recover until 350 K with a sharper annealing stage at 250 K–350 K.

UR - https://www.scopus.com/pages/publications/84989487665

U2 - 10.1002/crat.2170230323

DO - 10.1002/crat.2170230323

M3 - Article

AN - SCOPUS:84989487665

SN - 0232-1300

VL - 23

SP - 409

EP - 412

JO - Crystal Research and Technology

JF - Crystal Research and Technology

IS - 3

ER -

Positron lifetime measurements in as‐grown and electron irradiated InSb

Abstract

Access to Document

Other files and links

Fingerprint

Cite this