Positron trapping at native vacancies in CdTe crystals: In doping effect

C. Corbel; L. Baroux; F. M. Kiessling; C. Gély-Sykes; R. Triboulet

doi:10.1016/0921-5107(93)90029-M

Positron trapping at native vacancies in CdTe crystals: In doping effect

C. Corbel
, L. Baroux
, F. M. Kiessling
, C. Gély-Sykes
, R. Triboulet

Institut National des Sciences et Techniques Nucléaires
Centre national de la recherche scientifique

Research output: Contribution to journal › Article › peer-review

Abstract

Positron lifetime measurements give evidence on vacancies in n-type CdTe crystals. The crystals are either nominally undoped or In doped and grown by the travelling-heater method (THM) or the Bridgman technique. In THM CdTe(In) crystals grown using Te as the solvent, the concentration of vacancies correlates with the concentration of In and electrons. This correlation is in aggreement with the model of self-compensation where the In donors are compensated by In-vacancy complexes. In addition to (V_Cd-In)^- complexes, it is found that positrons are trapped by negative ions.

Original language	English
Pages (from-to)	134-138
Number of pages	5
Journal	Materials Science and Engineering: B
Volume	16
Issue number	1-3
DOIs	https://doi.org/10.1016/0921-5107(93)90029-M
Publication status	Published - 30 Jan 1993
Externally published	Yes

Access to Document

10.1016/0921-5107(93)90029-M

Cite this

@article{8b5b32ea52ed4fec97321a724860a1e7,

title = "Positron trapping at native vacancies in CdTe crystals: In doping effect",

abstract = "Positron lifetime measurements give evidence on vacancies in n-type CdTe crystals. The crystals are either nominally undoped or In doped and grown by the travelling-heater method (THM) or the Bridgman technique. In THM CdTe(In) crystals grown using Te as the solvent, the concentration of vacancies correlates with the concentration of In and electrons. This correlation is in aggreement with the model of self-compensation where the In donors are compensated by In-vacancy complexes. In addition to (VCd-In)- complexes, it is found that positrons are trapped by negative ions.",

author = "C. Corbel and L. Baroux and Kiessling, \{F. M.\} and C. G{\'e}ly-Sykes and R. Triboulet",

year = "1993",

month = jan,

day = "30",

doi = "10.1016/0921-5107(93)90029-M",

language = "English",

volume = "16",

pages = "134--138",

journal = "Materials Science and Engineering: B",

issn = "0921-5107",

number = "1-3",

}

TY - JOUR

T1 - Positron trapping at native vacancies in CdTe crystals

T2 - In doping effect

AU - Corbel, C.

AU - Baroux, L.

AU - Kiessling, F. M.

AU - Gély-Sykes, C.

AU - Triboulet, R.

PY - 1993/1/30

Y1 - 1993/1/30

N2 - Positron lifetime measurements give evidence on vacancies in n-type CdTe crystals. The crystals are either nominally undoped or In doped and grown by the travelling-heater method (THM) or the Bridgman technique. In THM CdTe(In) crystals grown using Te as the solvent, the concentration of vacancies correlates with the concentration of In and electrons. This correlation is in aggreement with the model of self-compensation where the In donors are compensated by In-vacancy complexes. In addition to (VCd-In)- complexes, it is found that positrons are trapped by negative ions.

AB - Positron lifetime measurements give evidence on vacancies in n-type CdTe crystals. The crystals are either nominally undoped or In doped and grown by the travelling-heater method (THM) or the Bridgman technique. In THM CdTe(In) crystals grown using Te as the solvent, the concentration of vacancies correlates with the concentration of In and electrons. This correlation is in aggreement with the model of self-compensation where the In donors are compensated by In-vacancy complexes. In addition to (VCd-In)- complexes, it is found that positrons are trapped by negative ions.

UR - https://www.scopus.com/pages/publications/0027306644

U2 - 10.1016/0921-5107(93)90029-M

DO - 10.1016/0921-5107(93)90029-M

M3 - Article

AN - SCOPUS:0027306644

SN - 0921-5107

VL - 16

SP - 134

EP - 138

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 1-3

ER -

Positron trapping at native vacancies in CdTe crystals: In doping effect

Abstract

Access to Document

Other files and links

Fingerprint

Cite this