Positron trapping in vacancies in indium doped CdTe crystals

C. Gély-Sykes; C. Corbel; R. Triboulet

doi:10.1016/0038-1098(91)90602-R

Positron trapping in vacancies in indium doped CdTe crystals

C. Gély-Sykes
, C. Corbel
, R. Triboulet

Institut National des Sciences et Techniques Nucléaires
Centre national de la recherche scientifique

Research output: Contribution to journal › Article › peer-review

Abstract

In weakly n-type CdTe(In) crystals grown by the travelling heater method, positrons annihilate in vacancy-type defects with a lifetime of 320 ± 4 ps. The concentration of these native defects varies with the concentration of indium and electron in agreement with the model of self-compensation where the indium donors are compensated by indium-vacancy complexes. These defects are assumed to be (V_CdIn)^- complexes. The positron trapping in these complexes disappears at low temperature. This phenomenon is attributed to competing trapping of positrons by negative ions which are either residual impurities or intrinsic defects.

Original language	English
Pages (from-to)	79-83
Number of pages	5
Journal	Solid State Communications
Volume	80
Issue number	1
DOIs	https://doi.org/10.1016/0038-1098(91)90602-R
Publication status	Published - 1 Jan 1991
Externally published	Yes

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title = "Positron trapping in vacancies in indium doped CdTe crystals",

abstract = "In weakly n-type CdTe(In) crystals grown by the travelling heater method, positrons annihilate in vacancy-type defects with a lifetime of 320 ± 4 ps. The concentration of these native defects varies with the concentration of indium and electron in agreement with the model of self-compensation where the indium donors are compensated by indium-vacancy complexes. These defects are assumed to be (VCdIn)- complexes. The positron trapping in these complexes disappears at low temperature. This phenomenon is attributed to competing trapping of positrons by negative ions which are either residual impurities or intrinsic defects.",

author = "C. G{\'e}ly-Sykes and C. Corbel and R. Triboulet",

year = "1991",

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AU - Gély-Sykes, C.

AU - Corbel, C.

AU - Triboulet, R.

PY - 1991/1/1

Y1 - 1991/1/1

N2 - In weakly n-type CdTe(In) crystals grown by the travelling heater method, positrons annihilate in vacancy-type defects with a lifetime of 320 ± 4 ps. The concentration of these native defects varies with the concentration of indium and electron in agreement with the model of self-compensation where the indium donors are compensated by indium-vacancy complexes. These defects are assumed to be (VCdIn)- complexes. The positron trapping in these complexes disappears at low temperature. This phenomenon is attributed to competing trapping of positrons by negative ions which are either residual impurities or intrinsic defects.

AB - In weakly n-type CdTe(In) crystals grown by the travelling heater method, positrons annihilate in vacancy-type defects with a lifetime of 320 ± 4 ps. The concentration of these native defects varies with the concentration of indium and electron in agreement with the model of self-compensation where the indium donors are compensated by indium-vacancy complexes. These defects are assumed to be (VCdIn)- complexes. The positron trapping in these complexes disappears at low temperature. This phenomenon is attributed to competing trapping of positrons by negative ions which are either residual impurities or intrinsic defects.

U2 - 10.1016/0038-1098(91)90602-R

DO - 10.1016/0038-1098(91)90602-R

M3 - Article

AN - SCOPUS:0026237259

SN - 0038-1098

VL - 80

SP - 79

EP - 83

JO - Solid State Communications

JF - Solid State Communications

IS - 1

ER -

Positron trapping in vacancies in indium doped CdTe crystals

Abstract

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