Power amplifier characterization: An active load-pull system based on six-port reflectometer using complex modulated carrier

Souheil Bensmida; Eric Bergeault; Ghalid Idir Abib; Bernard Huyart

doi:10.1109/TMTT.2006.874870

Power amplifier characterization: An active load-pull system based on six-port reflectometer using complex modulated carrier

Souheil Bensmida
, Eric Bergeault
, Ghalid Idir Abib
, Bernard Huyart

Telecom Paris
IEEE

Research output: Contribution to journal › Article › peer-review

Abstract

An original measurement system for nonlinear RF power-transistor characterization is presented. This new setup enables measurement and optimization of output power, power-added efficiency (PAE), or linearity using active fundamental tuning and six-port reflectometers as vector network analyzers. High- and low-frequency bias-tees are inserted at both ports of transistors in order to control source and load impedances at the baseband (envelope) frequency. Experimental results at 1.575 GHz show an adjacent channel power ratio improvement of 20 dB for a commercial GaAs MESFET power transistor operating in class AB. Moreover, the output power and PAE are increased by 1 dB and ten points, respectively.

Original language	English
Pages (from-to)	2707-2712
Number of pages	6
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	54
Issue number	6
DOIs	https://doi.org/10.1109/TMTT.2006.874870
Publication status	Published - 1 Jun 2006

Keywords

Load-pull contours
Low-frequency impedance
Power amplifier characterization
Power amplifier linearity
Six-port reflectometer

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10.1109/TMTT.2006.874870

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title = "Power amplifier characterization: An active load-pull system based on six-port reflectometer using complex modulated carrier",

abstract = "An original measurement system for nonlinear RF power-transistor characterization is presented. This new setup enables measurement and optimization of output power, power-added efficiency (PAE), or linearity using active fundamental tuning and six-port reflectometers as vector network analyzers. High- and low-frequency bias-tees are inserted at both ports of transistors in order to control source and load impedances at the baseband (envelope) frequency. Experimental results at 1.575 GHz show an adjacent channel power ratio improvement of 20 dB for a commercial GaAs MESFET power transistor operating in class AB. Moreover, the output power and PAE are increased by 1 dB and ten points, respectively.",

keywords = "Load-pull contours, Low-frequency impedance, Power amplifier characterization, Power amplifier linearity, Six-port reflectometer",

author = "Souheil Bensmida and Eric Bergeault and Abib, \{Ghalid Idir\} and Bernard Huyart",

year = "2006",

month = jun,

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doi = "10.1109/TMTT.2006.874870",

language = "English",

volume = "54",

pages = "2707--2712",

journal = "IEEE Transactions on Microwave Theory and Techniques",

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T1 - Power amplifier characterization

T2 - An active load-pull system based on six-port reflectometer using complex modulated carrier

AU - Bensmida, Souheil

AU - Bergeault, Eric

AU - Abib, Ghalid Idir

AU - Huyart, Bernard

PY - 2006/6/1

Y1 - 2006/6/1

N2 - An original measurement system for nonlinear RF power-transistor characterization is presented. This new setup enables measurement and optimization of output power, power-added efficiency (PAE), or linearity using active fundamental tuning and six-port reflectometers as vector network analyzers. High- and low-frequency bias-tees are inserted at both ports of transistors in order to control source and load impedances at the baseband (envelope) frequency. Experimental results at 1.575 GHz show an adjacent channel power ratio improvement of 20 dB for a commercial GaAs MESFET power transistor operating in class AB. Moreover, the output power and PAE are increased by 1 dB and ten points, respectively.

AB - An original measurement system for nonlinear RF power-transistor characterization is presented. This new setup enables measurement and optimization of output power, power-added efficiency (PAE), or linearity using active fundamental tuning and six-port reflectometers as vector network analyzers. High- and low-frequency bias-tees are inserted at both ports of transistors in order to control source and load impedances at the baseband (envelope) frequency. Experimental results at 1.575 GHz show an adjacent channel power ratio improvement of 20 dB for a commercial GaAs MESFET power transistor operating in class AB. Moreover, the output power and PAE are increased by 1 dB and ten points, respectively.

KW - Load-pull contours

KW - Low-frequency impedance

KW - Power amplifier characterization

KW - Power amplifier linearity

KW - Six-port reflectometer

U2 - 10.1109/TMTT.2006.874870

DO - 10.1109/TMTT.2006.874870

M3 - Article

AN - SCOPUS:33947417698

SN - 0018-9480

VL - 54

SP - 2707

EP - 2712

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

IS - 6

ER -

Power amplifier characterization: An active load-pull system based on six-port reflectometer using complex modulated carrier

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Keywords

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