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Probability current related to a non-quadratic Hamiltonian: Application to semiconductors

  • CEA/DSM/IRAMIS
  • Centre national de la recherche scientifique

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In non-centrosymmetric semiconductors with zinc-blende structure grown along the [110] crystallographic direction, electrons with up and down spins undergo different quantum phase shifts upon tunneling, which can be wieved as resulting from spin precession around a complex magnetic field. There is no spin filtering but a pure spin dephasing. The phase shift of the transmitted wave is proportional to the overall barrier-material thickness. We show that a device incorporating a number of resonant tunnel barriers constitutes an efficient quantum-phase shifter.

Original languageEnglish
Title of host publicationSpintronics II
DOIs
Publication statusPublished - 23 Nov 2009
Externally publishedYes
EventSpintronics II - San Diego, CA, United States
Duration: 2 Aug 20095 Aug 2009

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7398
ISSN (Print)0277-786X

Conference

ConferenceSpintronics II
Country/TerritoryUnited States
CitySan Diego, CA
Period2/08/095/08/09

Keywords

  • K · p theory
  • Spin dependent tunneling
  • Ssemiconductor

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