Probing of localized reflections in photonic devices and circuits on InP using an upgraded high precision reflectometer

E. V.K. Rao; Y. Gottesman; D. Piot; L. Lucatero; E. Vergnol; M. Pommi

doi:10.1109/ICIPRM.2001.929086

Probing of localized reflections in photonic devices and circuits on InP using an upgraded high precision reflectometer

E. V.K. Rao, Y. Gottesman, D. Piot, L. Lucatero, E. Vergnol, M. Pommi

Research output: Contribution to journal › Article › peer-review

Abstract

A high precision reflectometer for probing of localized reflections in photonic devices and circuits on InP was described. The reflectometer employed was the Michelson interferometer equipped with two low-coherence light probes. The optical and opto-electronic quality of the cavity were investigated through the transmitted probe light and the edge-electroluninescence from the device under carrier injection. This ivestigation led to the precise location of the unknown reflection. The recording of edge-electroluminescence spectrum from the test device provided the access to the opto-electronic quality of the guiding layer and the carrier combination properties of a center.

Original language	English
Pages (from-to)	178-179
Number of pages	2
Journal	Conference Proceedings-International Conference on Indium Phosphide and Related Materials
DOIs	https://doi.org/10.1109/ICIPRM.2001.929086
Publication status	Published - 1 Jan 2001
Externally published	Yes

Access to Document

10.1109/ICIPRM.2001.929086

Cite this

@article{059936adf8e0404f9d17371111caa046,

title = "Probing of localized reflections in photonic devices and circuits on InP using an upgraded high precision reflectometer",

abstract = "A high precision reflectometer for probing of localized reflections in photonic devices and circuits on InP was described. The reflectometer employed was the Michelson interferometer equipped with two low-coherence light probes. The optical and opto-electronic quality of the cavity were investigated through the transmitted probe light and the edge-electroluninescence from the device under carrier injection. This ivestigation led to the precise location of the unknown reflection. The recording of edge-electroluminescence spectrum from the test device provided the access to the opto-electronic quality of the guiding layer and the carrier combination properties of a center.",

author = "Rao, \{E. V.K.\} and Y. Gottesman and D. Piot and L. Lucatero and E. Vergnol and M. Pommi",

year = "2001",

month = jan,

day = "1",

doi = "10.1109/ICIPRM.2001.929086",

language = "English",

pages = "178--179",

journal = "Conference Proceedings-International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

}

TY - JOUR

T1 - Probing of localized reflections in photonic devices and circuits on InP using an upgraded high precision reflectometer

AU - Rao, E. V.K.

AU - Gottesman, Y.

AU - Piot, D.

AU - Lucatero, L.

AU - Vergnol, E.

AU - Pommi, M.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - A high precision reflectometer for probing of localized reflections in photonic devices and circuits on InP was described. The reflectometer employed was the Michelson interferometer equipped with two low-coherence light probes. The optical and opto-electronic quality of the cavity were investigated through the transmitted probe light and the edge-electroluninescence from the device under carrier injection. This ivestigation led to the precise location of the unknown reflection. The recording of edge-electroluminescence spectrum from the test device provided the access to the opto-electronic quality of the guiding layer and the carrier combination properties of a center.

AB - A high precision reflectometer for probing of localized reflections in photonic devices and circuits on InP was described. The reflectometer employed was the Michelson interferometer equipped with two low-coherence light probes. The optical and opto-electronic quality of the cavity were investigated through the transmitted probe light and the edge-electroluninescence from the device under carrier injection. This ivestigation led to the precise location of the unknown reflection. The recording of edge-electroluminescence spectrum from the test device provided the access to the opto-electronic quality of the guiding layer and the carrier combination properties of a center.

U2 - 10.1109/ICIPRM.2001.929086

DO - 10.1109/ICIPRM.2001.929086

M3 - Article

AN - SCOPUS:0034854249

SN - 1092-8669

SP - 178

EP - 179

JO - Conference Proceedings-International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings-International Conference on Indium Phosphide and Related Materials

ER -

Probing of localized reflections in photonic devices and circuits on InP using an upgraded high precision reflectometer

Abstract

Access to Document

Fingerprint

Cite this