Process monitoring of semiconductor thin films and interfaces by spectroellipsometry

R. Brenot; B. Drévillon; P. Bulkin; P. Roca I Cabarrocas; R. Vanderhaghen

doi:10.1016/S0169-4332(99)00501-2

Process monitoring of semiconductor thin films and interfaces by spectroellipsometry

R. Brenot
, B. Drévillon
, P. Bulkin
, P. Roca I Cabarrocas
, R. Vanderhaghen

Institut polytechnique de Paris

Research output: Contribution to journal › Conference article › peer-review

Abstract

Real-time monitoring of the growth of plasma deposited microcrystalline silicon (μc-Si:H) by multi-wavelength phase-modulated ellipsometry is presented. Several growth models for process-monitoring are reviewed. In particular the inhomogeneity in μc-Si layers is treated by allowing graded-index profile in the bulk. Using the Bruggeman effective medium theory, we describe the optical properties of μc-Si and the monitoring of the crystallinity in the upper and lower parts of the layer, and the thickness. The inversion algorithm is very fast, with calculation times within 5 s using typical PC. This method opens up ways for precise control of surface roughness, bulk thickness, and crystallization of both the top and bottom interfaces of the layer during processing devices such as solar cells and thin film transistors.

Original language	English
Pages (from-to)	283-290
Number of pages	8
Journal	Applied Surface Science
Volume	154
DOIs	https://doi.org/10.1016/S0169-4332(99)00501-2
Publication status	Published - 1 Feb 2000
Event	The Symposium A on Photo-Excited Processes, Diagnostics and Applications of the 1999 E-MRS Spring Conference (ICPEPA-3) - Strasbourg, France Duration: 1 Jun 1999 → 4 Jun 1999

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10.1016/S0169-4332(99)00501-2

Cite this

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title = "Process monitoring of semiconductor thin films and interfaces by spectroellipsometry",

abstract = "Real-time monitoring of the growth of plasma deposited microcrystalline silicon (μc-Si:H) by multi-wavelength phase-modulated ellipsometry is presented. Several growth models for process-monitoring are reviewed. In particular the inhomogeneity in μc-Si layers is treated by allowing graded-index profile in the bulk. Using the Bruggeman effective medium theory, we describe the optical properties of μc-Si and the monitoring of the crystallinity in the upper and lower parts of the layer, and the thickness. The inversion algorithm is very fast, with calculation times within 5 s using typical PC. This method opens up ways for precise control of surface roughness, bulk thickness, and crystallization of both the top and bottom interfaces of the layer during processing devices such as solar cells and thin film transistors.",

author = "R. Brenot and B. Dr{\'e}villon and P. Bulkin and \{Roca I Cabarrocas\}, P. and R. Vanderhaghen",

year = "2000",

month = feb,

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doi = "10.1016/S0169-4332(99)00501-2",

language = "English",

volume = "154",

pages = "283--290",

journal = "Applied Surface Science",

issn = "0169-4332",

note = "The Symposium A on Photo-Excited Processes, Diagnostics and Applications of the 1999 E-MRS Spring Conference (ICPEPA-3) ; Conference date: 01-06-1999 Through 04-06-1999",

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TY - JOUR

T1 - Process monitoring of semiconductor thin films and interfaces by spectroellipsometry

AU - Brenot, R.

AU - Drévillon, B.

AU - Bulkin, P.

AU - Roca I Cabarrocas, P.

AU - Vanderhaghen, R.

PY - 2000/2/1

Y1 - 2000/2/1

N2 - Real-time monitoring of the growth of plasma deposited microcrystalline silicon (μc-Si:H) by multi-wavelength phase-modulated ellipsometry is presented. Several growth models for process-monitoring are reviewed. In particular the inhomogeneity in μc-Si layers is treated by allowing graded-index profile in the bulk. Using the Bruggeman effective medium theory, we describe the optical properties of μc-Si and the monitoring of the crystallinity in the upper and lower parts of the layer, and the thickness. The inversion algorithm is very fast, with calculation times within 5 s using typical PC. This method opens up ways for precise control of surface roughness, bulk thickness, and crystallization of both the top and bottom interfaces of the layer during processing devices such as solar cells and thin film transistors.

AB - Real-time monitoring of the growth of plasma deposited microcrystalline silicon (μc-Si:H) by multi-wavelength phase-modulated ellipsometry is presented. Several growth models for process-monitoring are reviewed. In particular the inhomogeneity in μc-Si layers is treated by allowing graded-index profile in the bulk. Using the Bruggeman effective medium theory, we describe the optical properties of μc-Si and the monitoring of the crystallinity in the upper and lower parts of the layer, and the thickness. The inversion algorithm is very fast, with calculation times within 5 s using typical PC. This method opens up ways for precise control of surface roughness, bulk thickness, and crystallization of both the top and bottom interfaces of the layer during processing devices such as solar cells and thin film transistors.

UR - https://www.scopus.com/pages/publications/0343953435

U2 - 10.1016/S0169-4332(99)00501-2

DO - 10.1016/S0169-4332(99)00501-2

M3 - Conference article

AN - SCOPUS:0343953435

SN - 0169-4332

VL - 154

SP - 283

EP - 290

JO - Applied Surface Science

JF - Applied Surface Science

T2 - The Symposium A on Photo-Excited Processes, Diagnostics and Applications of the 1999 E-MRS Spring Conference (ICPEPA-3)

Y2 - 1 June 1999 through 4 June 1999

ER -

Process monitoring of semiconductor thin films and interfaces by spectroellipsometry

Abstract

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