Progress on tight-binding calculations of silicon grain boundaries containing nickel impurities

M. Torrent; O. B.M. Hardouin Duparc

doi:10.4028/www.scientific.net/msf.207-209.349

Progress on tight-binding calculations of silicon grain boundaries containing nickel impurities

M. Torrent, O. B.M. Hardouin Duparc

Laboratoire des Solides Irradiés

Research output: Contribution to journal › Article › peer-review

Abstract

A set of tight-binding parameters for Ni-Si compounds is being described. First tests on mechanical properties and pure silicon grain boundaries are presented.

Original language	English
Pages (from-to)	349-352
Number of pages	4
Journal	Materials Science Forum
Volume	207-209
Issue number	PART 1
DOIs	https://doi.org/10.4028/www.scientific.net/msf.207-209.349
Publication status	Published - 1 Jan 1996

Keywords

Electronic Structure
Grain Boundary
Nickel
Numerical Simulations
Silicon
Tight-Binding

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10.4028/www.scientific.net/msf.207-209.349

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title = "Progress on tight-binding calculations of silicon grain boundaries containing nickel impurities",

abstract = "A set of tight-binding parameters for Ni-Si compounds is being described. First tests on mechanical properties and pure silicon grain boundaries are presented.",

keywords = "Electronic Structure, Grain Boundary, Nickel, Numerical Simulations, Silicon, Tight-Binding",

author = "M. Torrent and \{Hardouin Duparc\}, \{O. B.M.\}",

year = "1996",

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KW - Electronic Structure

KW - Grain Boundary

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KW - Numerical Simulations

KW - Silicon

KW - Tight-Binding

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SP - 349

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JO - Materials Science Forum

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IS - PART 1

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Progress on tight-binding calculations of silicon grain boundaries containing nickel impurities

Abstract

Keywords

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