QD laser on InP substrate for 1.55 μm emission and beyond

N. Bertru; C. Paranthoen; O. Dehaese; H. Folliot; A. Le Corre; R. Piron; F. Grillot; W. Lu; J. Even; G. Elias; C. Levallois; S. Loualiche; M. Bozkurt; J. Ulloa; P. Koenraad; A. Ponchet

doi:10.1117/12.848398

QD laser on InP substrate for 1.55 μm emission and beyond

N. Bertru, C. Paranthoen, O. Dehaese, H. Folliot, A. Le Corre, R. Piron, F. Grillot, W. Lu, J. Even, G. Elias, C. Levallois, S. Loualiche, M. Bozkurt, J. Ulloa, P. Koenraad, A. Ponchet

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

InAs nanostructures formed on InP substrates allow the realization of devices working in telecommunication wavelength range between 1.4 and 1.65 μm. However due to the low lattice mismatch existing between InAs and InP, the self assembling process in InP is more complex than on GaAs substrates. First high density quantum wires obtained on InP(001) have been integrated in laser. Lasers emitting at room temperature have been achieved. For an infinite length cavity, a threshold current density per QD plane as low as 45 A/cm ² is deduced. This result compares favourably with those obtained on quantum wells lasers. However, the stability of the threshold current with temperature, predicted for quantum dots laser is not observed. Thus, growth on non standard substrates such as miscut substrates or high index substrates have been investigated in order to achieve QDs on InP. On (113) B substrates, quantum dots in high density and with size comparable with those achieved on GaAs(001) have been obtained. Lasers with record threshold current have been obtained. However the modulation properties of the laser are not as good as predicted for ideal quantum dots lasers. Finally we present the attempts to extend the QD emission wavelength in the 2-3 μm region.

Original language	English
Title of host publication	Quantum Sensing and Nanophotonic Devices VII
DOIs	https://doi.org/10.1117/12.848398
Publication status	Published - 13 May 2010
Externally published	Yes
Event	Quantum Sensing and Nanophotonic Devices VII - San Francisco, CA, United States Duration: 24 Jan 2010 → 28 Jan 2010

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7608
ISSN (Print)	0277-786X

Conference

Conference	Quantum Sensing and Nanophotonic Devices VII
Country/Territory	United States
City	San Francisco, CA
Period	24/01/10 → 28/01/10

Keywords

InAs/InP nanostructure
Molecular beam epitaxy
QD laser

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10.1117/12.848398

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Bertru, N., Paranthoen, C., Dehaese, O., Folliot, H., Le Corre, A., Piron, R., Grillot, F., Lu, W., Even, J., Elias, G., Levallois, C., Loualiche, S., Bozkurt, M., Ulloa, J., Koenraad, P., & Ponchet, A. (2010). QD laser on InP substrate for 1.55 μm emission and beyond. In Quantum Sensing and Nanophotonic Devices VII Article 76081B (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7608). https://doi.org/10.1117/12.848398

@inproceedings{6bbb6c88ab48487ea7fade12a0296398,

title = "QD laser on InP substrate for 1.55 μm emission and beyond",

abstract = "InAs nanostructures formed on InP substrates allow the realization of devices working in telecommunication wavelength range between 1.4 and 1.65 μm. However due to the low lattice mismatch existing between InAs and InP, the self assembling process in InP is more complex than on GaAs substrates. First high density quantum wires obtained on InP(001) have been integrated in laser. Lasers emitting at room temperature have been achieved. For an infinite length cavity, a threshold current density per QD plane as low as 45 A/cm 2 is deduced. This result compares favourably with those obtained on quantum wells lasers. However, the stability of the threshold current with temperature, predicted for quantum dots laser is not observed. Thus, growth on non standard substrates such as miscut substrates or high index substrates have been investigated in order to achieve QDs on InP. On (113) B substrates, quantum dots in high density and with size comparable with those achieved on GaAs(001) have been obtained. Lasers with record threshold current have been obtained. However the modulation properties of the laser are not as good as predicted for ideal quantum dots lasers. Finally we present the attempts to extend the QD emission wavelength in the 2-3 μm region.",

keywords = "InAs/InP nanostructure, Molecular beam epitaxy, QD laser",

author = "N. Bertru and C. Paranthoen and O. Dehaese and H. Folliot and \{Le Corre\}, A. and R. Piron and F. Grillot and W. Lu and J. Even and G. Elias and C. Levallois and S. Loualiche and M. Bozkurt and J. Ulloa and P. Koenraad and A. Ponchet",

year = "2010",

month = may,

day = "13",

doi = "10.1117/12.848398",

language = "English",

isbn = "9780819480040",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Quantum Sensing and Nanophotonic Devices VII",

note = "Quantum Sensing and Nanophotonic Devices VII ; Conference date: 24-01-2010 Through 28-01-2010",

}

Bertru, N, Paranthoen, C, Dehaese, O, Folliot, H, Le Corre, A, Piron, R, Grillot, F, Lu, W, Even, J, Elias, G, Levallois, C, Loualiche, S, Bozkurt, M, Ulloa, J, Koenraad, P & Ponchet, A 2010, QD laser on InP substrate for 1.55 μm emission and beyond. in Quantum Sensing and Nanophotonic Devices VII., 76081B, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7608, Quantum Sensing and Nanophotonic Devices VII, San Francisco, CA, United States, 24/01/10. https://doi.org/10.1117/12.848398

TY - GEN

T1 - QD laser on InP substrate for 1.55 μm emission and beyond

AU - Bertru, N.

AU - Paranthoen, C.

AU - Dehaese, O.

AU - Folliot, H.

AU - Le Corre, A.

AU - Piron, R.

AU - Grillot, F.

AU - Lu, W.

AU - Even, J.

AU - Elias, G.

AU - Levallois, C.

AU - Loualiche, S.

AU - Bozkurt, M.

AU - Ulloa, J.

AU - Koenraad, P.

AU - Ponchet, A.

PY - 2010/5/13

Y1 - 2010/5/13

N2 - InAs nanostructures formed on InP substrates allow the realization of devices working in telecommunication wavelength range between 1.4 and 1.65 μm. However due to the low lattice mismatch existing between InAs and InP, the self assembling process in InP is more complex than on GaAs substrates. First high density quantum wires obtained on InP(001) have been integrated in laser. Lasers emitting at room temperature have been achieved. For an infinite length cavity, a threshold current density per QD plane as low as 45 A/cm 2 is deduced. This result compares favourably with those obtained on quantum wells lasers. However, the stability of the threshold current with temperature, predicted for quantum dots laser is not observed. Thus, growth on non standard substrates such as miscut substrates or high index substrates have been investigated in order to achieve QDs on InP. On (113) B substrates, quantum dots in high density and with size comparable with those achieved on GaAs(001) have been obtained. Lasers with record threshold current have been obtained. However the modulation properties of the laser are not as good as predicted for ideal quantum dots lasers. Finally we present the attempts to extend the QD emission wavelength in the 2-3 μm region.

AB - InAs nanostructures formed on InP substrates allow the realization of devices working in telecommunication wavelength range between 1.4 and 1.65 μm. However due to the low lattice mismatch existing between InAs and InP, the self assembling process in InP is more complex than on GaAs substrates. First high density quantum wires obtained on InP(001) have been integrated in laser. Lasers emitting at room temperature have been achieved. For an infinite length cavity, a threshold current density per QD plane as low as 45 A/cm 2 is deduced. This result compares favourably with those obtained on quantum wells lasers. However, the stability of the threshold current with temperature, predicted for quantum dots laser is not observed. Thus, growth on non standard substrates such as miscut substrates or high index substrates have been investigated in order to achieve QDs on InP. On (113) B substrates, quantum dots in high density and with size comparable with those achieved on GaAs(001) have been obtained. Lasers with record threshold current have been obtained. However the modulation properties of the laser are not as good as predicted for ideal quantum dots lasers. Finally we present the attempts to extend the QD emission wavelength in the 2-3 μm region.

KW - InAs/InP nanostructure

KW - Molecular beam epitaxy

KW - QD laser

U2 - 10.1117/12.848398

DO - 10.1117/12.848398

M3 - Conference contribution

AN - SCOPUS:77952005558

SN - 9780819480040

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Quantum Sensing and Nanophotonic Devices VII

T2 - Quantum Sensing and Nanophotonic Devices VII

Y2 - 24 January 2010 through 28 January 2010

ER -

QD laser on InP substrate for 1.55 μm emission and beyond

Abstract

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Keywords

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