Radiative transfer in semiconductor microcavities

J. Wainstain; D. Gendt; C. Delalande; M. Voos; V. Thierry-Mieg; J. Bloch; R. Planel

doi:10.1016/S1386-9477(98)00188-X

Radiative transfer in semiconductor microcavities

J. Wainstain
, D. Gendt
, C. Delalande
, M. Voos
, V. Thierry-Mieg
, J. Bloch
, R. Planel

PSL research University & IPSL
Lab. Microstructures Microlectron.

Research output: Contribution to journal › Article › peer-review

Abstract

Two sets of quantum wells of slightly different thicknesses are grown at the antinode positions of a planar semiconductor microcavity. The excitation transfer from one set to the other, distant by 1400 Å, is studied by means of photoluminescence and photoluminescence excitation spectroscopies. The role of delocalized microcavity polariton states is emphasized.

Original language	English
Pages (from-to)	925-928
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	2
Issue number	1-4
DOIs	https://doi.org/10.1016/S1386-9477(98)00188-X
Publication status	Published - 15 Jul 1998
Externally published	Yes

Keywords

Optical and electronic properties
Polaritons
Semiconductor quantum wells

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10.1016/S1386-9477(98)00188-X

Cite this

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title = "Radiative transfer in semiconductor microcavities",

abstract = "Two sets of quantum wells of slightly different thicknesses are grown at the antinode positions of a planar semiconductor microcavity. The excitation transfer from one set to the other, distant by 1400 {\AA}, is studied by means of photoluminescence and photoluminescence excitation spectroscopies. The role of delocalized microcavity polariton states is emphasized.",

keywords = "Optical and electronic properties, Polaritons, Semiconductor quantum wells",

author = "J. Wainstain and D. Gendt and C. Delalande and M. Voos and V. Thierry-Mieg and J. Bloch and R. Planel",

year = "1998",

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T1 - Radiative transfer in semiconductor microcavities

AU - Wainstain, J.

AU - Gendt, D.

AU - Delalande, C.

AU - Voos, M.

AU - Thierry-Mieg, V.

AU - Bloch, J.

AU - Planel, R.

PY - 1998/7/15

Y1 - 1998/7/15

N2 - Two sets of quantum wells of slightly different thicknesses are grown at the antinode positions of a planar semiconductor microcavity. The excitation transfer from one set to the other, distant by 1400 Å, is studied by means of photoluminescence and photoluminescence excitation spectroscopies. The role of delocalized microcavity polariton states is emphasized.

AB - Two sets of quantum wells of slightly different thicknesses are grown at the antinode positions of a planar semiconductor microcavity. The excitation transfer from one set to the other, distant by 1400 Å, is studied by means of photoluminescence and photoluminescence excitation spectroscopies. The role of delocalized microcavity polariton states is emphasized.

KW - Optical and electronic properties

KW - Polaritons

KW - Semiconductor quantum wells

UR - https://www.scopus.com/pages/publications/0000333740

U2 - 10.1016/S1386-9477(98)00188-X

DO - 10.1016/S1386-9477(98)00188-X

M3 - Article

AN - SCOPUS:0000333740

SN - 1386-9477

VL - 2

SP - 925

EP - 928

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-4

ER -

Radiative transfer in semiconductor microcavities

Abstract

Keywords

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