Raman scattering analysis of SiH bond stretching modes in hydrogenated microcrystalline silicon for use in thin-film photovoltaics

E. V. Johnson; L. Kroely; P. Roca i Cabarrocas

doi:10.1016/j.solmat.2009.06.018

Raman scattering analysis of SiH bond stretching modes in hydrogenated microcrystalline silicon for use in thin-film photovoltaics

Institut polytechnique de Paris

Research output: Contribution to journal › Article › peer-review

Abstract

The presence of a pair of peaks in the high wavenumber infrared (IR) absorption region of hydrogenated microcrystalline silicon (μc-Si:H) has been recently proposed as a strong indicator of poor quality material that is prone to oxidation and is therefore unsuitable for thin-film, photovoltaic applications. In this work, we show that these peaks located at 2083 and 2100 cm^-1 are also present in the Raman scattering spectra of μc-Si:H and therefore can be directly measured on substrates that are suitable for solar cells. We present results for material grown by matrix-distributed electron-cyclotron resonance (MD-ECR) plasma-enhanced chemical vapour deposition (PECVD) on both crystalline silicon and borosilicate glass substrates. The narrow, twinned peaks detected by Raman disappear with time-presumably due to oxidation-although a broad peak at 2100 cm^-1 remains.

Original language	English
Pages (from-to)	1904-1906
Number of pages	3
Journal	Solar Energy Materials and Solar Cells
Volume	93
Issue number	10
DOIs	https://doi.org/10.1016/j.solmat.2009.06.018
Publication status	Published - 1 Jan 2009

Keywords

FTIR
Hydrogen
Microcrystalline silicon
Microstructure
PECVD
Raman
Thin-film silicon

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10.1016/j.solmat.2009.06.018

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title = "Raman scattering analysis of SiH bond stretching modes in hydrogenated microcrystalline silicon for use in thin-film photovoltaics",

abstract = "The presence of a pair of peaks in the high wavenumber infrared (IR) absorption region of hydrogenated microcrystalline silicon (μc-Si:H) has been recently proposed as a strong indicator of poor quality material that is prone to oxidation and is therefore unsuitable for thin-film, photovoltaic applications. In this work, we show that these peaks located at 2083 and 2100 cm-1 are also present in the Raman scattering spectra of μc-Si:H and therefore can be directly measured on substrates that are suitable for solar cells. We present results for material grown by matrix-distributed electron-cyclotron resonance (MD-ECR) plasma-enhanced chemical vapour deposition (PECVD) on both crystalline silicon and borosilicate glass substrates. The narrow, twinned peaks detected by Raman disappear with time-presumably due to oxidation-although a broad peak at 2100 cm-1 remains.",

keywords = "FTIR, Hydrogen, Microcrystalline silicon, Microstructure, PECVD, Raman, Thin-film silicon",

author = "Johnson, \{E. V.\} and L. Kroely and \{Roca i Cabarrocas\}, P.",

year = "2009",

month = jan,

day = "1",

doi = "10.1016/j.solmat.2009.06.018",

language = "English",

volume = "93",

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journal = "Solar Energy Materials and Solar Cells",

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TY - JOUR

T1 - Raman scattering analysis of SiH bond stretching modes in hydrogenated microcrystalline silicon for use in thin-film photovoltaics

AU - Johnson, E. V.

AU - Kroely, L.

AU - Roca i Cabarrocas, P.

PY - 2009/1/1

Y1 - 2009/1/1

N2 - The presence of a pair of peaks in the high wavenumber infrared (IR) absorption region of hydrogenated microcrystalline silicon (μc-Si:H) has been recently proposed as a strong indicator of poor quality material that is prone to oxidation and is therefore unsuitable for thin-film, photovoltaic applications. In this work, we show that these peaks located at 2083 and 2100 cm-1 are also present in the Raman scattering spectra of μc-Si:H and therefore can be directly measured on substrates that are suitable for solar cells. We present results for material grown by matrix-distributed electron-cyclotron resonance (MD-ECR) plasma-enhanced chemical vapour deposition (PECVD) on both crystalline silicon and borosilicate glass substrates. The narrow, twinned peaks detected by Raman disappear with time-presumably due to oxidation-although a broad peak at 2100 cm-1 remains.

AB - The presence of a pair of peaks in the high wavenumber infrared (IR) absorption region of hydrogenated microcrystalline silicon (μc-Si:H) has been recently proposed as a strong indicator of poor quality material that is prone to oxidation and is therefore unsuitable for thin-film, photovoltaic applications. In this work, we show that these peaks located at 2083 and 2100 cm-1 are also present in the Raman scattering spectra of μc-Si:H and therefore can be directly measured on substrates that are suitable for solar cells. We present results for material grown by matrix-distributed electron-cyclotron resonance (MD-ECR) plasma-enhanced chemical vapour deposition (PECVD) on both crystalline silicon and borosilicate glass substrates. The narrow, twinned peaks detected by Raman disappear with time-presumably due to oxidation-although a broad peak at 2100 cm-1 remains.

KW - FTIR

KW - Hydrogen

KW - Microcrystalline silicon

KW - Microstructure

KW - PECVD

KW - Raman

KW - Thin-film silicon

U2 - 10.1016/j.solmat.2009.06.018

DO - 10.1016/j.solmat.2009.06.018

M3 - Article

AN - SCOPUS:68349105778

SN - 0927-0248

VL - 93

SP - 1904

EP - 1906

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

IS - 10

ER -

Raman scattering analysis of SiH bond stretching modes in hydrogenated microcrystalline silicon for use in thin-film photovoltaics

Abstract

Keywords

UN SDGs

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