Raman spectra of amorphous isotope-enriched 74Ge with low-strained Ge nanocrystals

B. A. Andreev, L. V. Gavrilenko, Yu N. Drozdov, P. A. Yunin, D. A. Pryakhin, L. A. Mochalov, P. G. Sennikov, P. Bulkin, P. Roca I Cabarrocas

Research output: Contribution to journalArticlepeer-review

Abstract

Our objective is to study Raman spectra from 74Ge isotope enriched nc-Ge/amorphous-Ge structures, given the expected minimal influence of the matrix on the nanocrystalline phase in the structures with a modified isotope composition. We also assess the potential of plasma-enhanced chemical vapor deposition for producing germanium nanocrystals in the amorphous matrix from germanium tetrafluoride enriched with 74Ge isotope. The nanocrystal phase was formed by annealing the samples in different conditions. The nc-Ge peak width and position in the Raman spectrum agree well with the theoretical data. The out-of-plane elastic strain of the nc-Ge lattice in the annealed structures, estimated from the shift of the Ge (111) and (220) diffraction peaks, was of the order of 1â̂™10- 3.

Original languageEnglish
Pages (from-to)46-49
Number of pages4
JournalThin Solid Films
Volume552
DOIs
Publication statusPublished - 3 Feb 2014

Keywords

  • Isotope-enriched Ge
  • Laser annealing
  • Nanocrystal
  • Raman spectra
  • Thin films

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