Reactive ion etching of silicon carbide in SF6 gas: Detection of CF, CF2, and SiF2 etch products

P. Chabert; G. Cunge; J. P. Booth; J. Perrin

doi:10.1063/1.1395520

Reactive ion etching of silicon carbide in SF₆ gas: Detection of CF, CF₂, and SiF₂ etch products

P. Chabert
, G. Cunge
, J. P. Booth
, J. Perrin

Lab. Technol. de la Microlectron.

Research output: Contribution to journal › Article › peer-review

Abstract

We have detected by laser-induced fluorescence the radicals SiF₂, CF, and CF₂ produced during the reactive ion etching of SiC substrates in a pure SF₆ plasma. Spatially and temporally resolved measurements were used to distinguish between gas phase and etched surface radical production. Whereas CF and CF₂ are produced directly at the etched surface, the SiF₂ radicals are produced in the gas phase (probably by electron-impact dissociation of SiF₄). We attribute this difference to the formation of a carbon-rich layer on the SiC substrate surface, the removal of which produces CF_x (x=1,2,3) radicals. The CF₂ radical represents up to 20% of the total carbon etch products under our conditions.

Original language	English
Pages (from-to)	916-918
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	7
DOIs	https://doi.org/10.1063/1.1395520
Publication status	Published - 13 Aug 2001

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title = "Reactive ion etching of silicon carbide in SF6 gas: Detection of CF, CF2, and SiF2 etch products",

abstract = "We have detected by laser-induced fluorescence the radicals SiF2, CF, and CF2 produced during the reactive ion etching of SiC substrates in a pure SF6 plasma. Spatially and temporally resolved measurements were used to distinguish between gas phase and etched surface radical production. Whereas CF and CF2 are produced directly at the etched surface, the SiF2 radicals are produced in the gas phase (probably by electron-impact dissociation of SiF4). We attribute this difference to the formation of a carbon-rich layer on the SiC substrate surface, the removal of which produces CFx (x=1,2,3) radicals. The CF2 radical represents up to 20\% of the total carbon etch products under our conditions.",

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year = "2001",

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T1 - Reactive ion etching of silicon carbide in SF6 gas

T2 - Detection of CF, CF2, and SiF2 etch products

AU - Chabert, P.

AU - Cunge, G.

AU - Booth, J. P.

AU - Perrin, J.

PY - 2001/8/13

Y1 - 2001/8/13

N2 - We have detected by laser-induced fluorescence the radicals SiF2, CF, and CF2 produced during the reactive ion etching of SiC substrates in a pure SF6 plasma. Spatially and temporally resolved measurements were used to distinguish between gas phase and etched surface radical production. Whereas CF and CF2 are produced directly at the etched surface, the SiF2 radicals are produced in the gas phase (probably by electron-impact dissociation of SiF4). We attribute this difference to the formation of a carbon-rich layer on the SiC substrate surface, the removal of which produces CFx (x=1,2,3) radicals. The CF2 radical represents up to 20% of the total carbon etch products under our conditions.

AB - We have detected by laser-induced fluorescence the radicals SiF2, CF, and CF2 produced during the reactive ion etching of SiC substrates in a pure SF6 plasma. Spatially and temporally resolved measurements were used to distinguish between gas phase and etched surface radical production. Whereas CF and CF2 are produced directly at the etched surface, the SiF2 radicals are produced in the gas phase (probably by electron-impact dissociation of SiF4). We attribute this difference to the formation of a carbon-rich layer on the SiC substrate surface, the removal of which produces CFx (x=1,2,3) radicals. The CF2 radical represents up to 20% of the total carbon etch products under our conditions.

UR - https://www.scopus.com/pages/publications/0040623256

U2 - 10.1063/1.1395520

DO - 10.1063/1.1395520

M3 - Article

AN - SCOPUS:0040623256

SN - 0003-6951

VL - 79

SP - 916

EP - 918

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Reactive ion etching of silicon carbide in SF₆ gas: Detection of CF, CF₂, and SiF₂ etch products

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