Abstract
A method which allows real-time microwave mobility measurements in thin-film semiconductors is described. Carriers mobility is determined during growth by combining two diagnostics: time-resolved microwave conductivity (TRMC) and spectroscopic ellipsometry (SE). TRMC provides the product of the number of free carriers, generated by a laser pulse, by their microwave mobility. The number of photogenerated carriers is calculated from real-time SE measurements. Therefore, the mobility of excess carriers in the growing layer can be deduced from TRMC measurements. In order to illustrate this technique, a TRMC setup has been implemented in situ together with real-time SE to analyze the growth of microcrystalline silicon (μc-Si) by radio frequency glow discharge. An increase of the average carrier mobility as a function of the film thickness is observed, which is compared with the increase of the crystalline fraction evidenced by SE.
| Original language | English |
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| Pages (from-to) | 58-60 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 74 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1 Dec 1999 |