Abstract
We report on the use of an innovative optical characterization technique - real-time Mueller polarimetric imaging in transmission - for the characterization of thin-film silicon solar cells. In this work, we used this technique to monitor the evolution of optical retardance induced by the mechanical stresses in hydrogenated amorphous and polymorphous silicon (a-Si : H and pm-Si : H) p-i-n (PIN) solar cells. Under current injection of 200 mA cm-2, the retardance of the pm-Si : H PIN solar cells decreased, while that of the a-Si : H PIN solar cells showed no significant change. After the current injection, the pm-Si : H PIN solar cells showed dramatic macroscopic changes on a scale of tens of micrometres, such as local peel-off and delamination from the substrate. Our results demonstrate that current injection introduces local stress relaxation, which can be efficiently monitored prior to irreversible damage from a decrease in the retardance of the pm-Si : H PIN solar cells.
| Original language | English |
|---|---|
| Article number | 045304 |
| Journal | Journal of Physics D: Applied Physics |
| Volume | 46 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 30 Jan 2013 |
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