Realisation of semiconductor optical amplifiers with homogeneous carrier density and low noise factor

F. Pommereau; R. Brenot; J. Landreau; L. Le Gouézigou; O. Le Gouézigou; F. Lelarge; F. Martin; F. Poingt; B. Rousseau; G. H. Duan; B. Thédrez

doi:10.1109/ICIPRM.2005.1517430

Realisation of semiconductor optical amplifiers with homogeneous carrier density and low noise factor

F. Pommereau
, R. Brenot
, J. Landreau
, L. Le Gouézigou
, O. Le Gouézigou
, F. Lelarge
, F. Martin
, F. Poingt
, B. Rousseau
, G. H. Duan
, B. Thédrez

Alcatel-Thales III-V Laboratory

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Citations (Scopus)

Abstract

Buried ridge hetero-structure with p-n blocking layers semiconductor optical amplifiers have been designed and fabricated. Noise figure as low as 6.5dB has been obtained in the case of low spatial hole burning, by optimising the confinement factor.

Original language	English
Title of host publication	2005 International Conference on Indium Phosphide and Related Materials
Pages	102-105
Number of pages	4
DOIs	https://doi.org/10.1109/ICIPRM.2005.1517430
Publication status	Published - 1 Dec 2005
Externally published	Yes
Event	2005 International Conference on Indium Phosphide and Related Materials - Glasgow, Scotland, United Kingdom Duration: 8 May 2005 → 12 May 2005

Publication series

Name	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Volume	2005
ISSN (Print)	1092-8669

Conference

Conference	2005 International Conference on Indium Phosphide and Related Materials
Country/Territory	United Kingdom
City	Glasgow, Scotland
Period	8/05/05 → 12/05/05

Access to Document

10.1109/ICIPRM.2005.1517430

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Pommereau, F., Brenot, R., Landreau, J., Le Gouézigou, L., Le Gouézigou, O., Lelarge, F., Martin, F., Poingt, F., Rousseau, B., Duan, G. H., & Thédrez, B. (2005). Realisation of semiconductor optical amplifiers with homogeneous carrier density and low noise factor. In 2005 International Conference on Indium Phosphide and Related Materials (pp. 102-105). Article 1517430 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials; Vol. 2005). https://doi.org/10.1109/ICIPRM.2005.1517430

@inproceedings{6c06550d25364f6e84554483a4042536,

title = "Realisation of semiconductor optical amplifiers with homogeneous carrier density and low noise factor",

abstract = "Buried ridge hetero-structure with p-n blocking layers semiconductor optical amplifiers have been designed and fabricated. Noise figure as low as 6.5dB has been obtained in the case of low spatial hole burning, by optimising the confinement factor.",

author = "F. Pommereau and R. Brenot and J. Landreau and \{Le Gou{\'e}zigou\}, L. and \{Le Gou{\'e}zigou\}, O. and F. Lelarge and F. Martin and F. Poingt and B. Rousseau and Duan, \{G. H.\} and B. Th{\'e}drez",

year = "2005",

month = dec,

day = "1",

doi = "10.1109/ICIPRM.2005.1517430",

language = "English",

isbn = "0780388917",

series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

pages = "102--105",

booktitle = "2005 International Conference on Indium Phosphide and Related Materials",

note = "2005 International Conference on Indium Phosphide and Related Materials ; Conference date: 08-05-2005 Through 12-05-2005",

}

Pommereau, F, Brenot, R, Landreau, J, Le Gouézigou, L, Le Gouézigou, O, Lelarge, F, Martin, F, Poingt, F, Rousseau, B, Duan, GH & Thédrez, B 2005, Realisation of semiconductor optical amplifiers with homogeneous carrier density and low noise factor. in 2005 International Conference on Indium Phosphide and Related Materials., 1517430, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, vol. 2005, pp. 102-105, 2005 International Conference on Indium Phosphide and Related Materials, Glasgow, Scotland, United Kingdom, 8/05/05. https://doi.org/10.1109/ICIPRM.2005.1517430

Realisation of semiconductor optical amplifiers with homogeneous carrier density and low noise factor. / Pommereau, F.; Brenot, R.; Landreau, J. et al.
2005 International Conference on Indium Phosphide and Related Materials. 2005. p. 102-105 1517430 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Realisation of semiconductor optical amplifiers with homogeneous carrier density and low noise factor

AU - Pommereau, F.

AU - Brenot, R.

AU - Landreau, J.

AU - Le Gouézigou, L.

AU - Le Gouézigou, O.

AU - Lelarge, F.

AU - Martin, F.

AU - Poingt, F.

AU - Rousseau, B.

AU - Duan, G. H.

AU - Thédrez, B.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - Buried ridge hetero-structure with p-n blocking layers semiconductor optical amplifiers have been designed and fabricated. Noise figure as low as 6.5dB has been obtained in the case of low spatial hole burning, by optimising the confinement factor.

AB - Buried ridge hetero-structure with p-n blocking layers semiconductor optical amplifiers have been designed and fabricated. Noise figure as low as 6.5dB has been obtained in the case of low spatial hole burning, by optimising the confinement factor.

U2 - 10.1109/ICIPRM.2005.1517430

DO - 10.1109/ICIPRM.2005.1517430

M3 - Conference contribution

AN - SCOPUS:33747431898

SN - 0780388917

SN - 9780780388918

T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

SP - 102

EP - 105

BT - 2005 International Conference on Indium Phosphide and Related Materials

T2 - 2005 International Conference on Indium Phosphide and Related Materials

Y2 - 8 May 2005 through 12 May 2005

ER -

Pommereau F, Brenot R, Landreau J, Le Gouézigou L, Le Gouézigou O, Lelarge F et al. Realisation of semiconductor optical amplifiers with homogeneous carrier density and low noise factor. In 2005 International Conference on Indium Phosphide and Related Materials. 2005. p. 102-105. 1517430. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). doi: 10.1109/ICIPRM.2005.1517430

Realisation of semiconductor optical amplifiers with homogeneous carrier density and low noise factor

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