Realization of a double-barrier resonant tunneling diode for cavity polaritons

H. S. Nguyen; D. Vishnevsky; C. Sturm; D. Tanese; D. Solnyshkov; E. Galopin; A. Lemaître; I. Sagnes; A. Amo; G. Malpuech; J. Bloch

doi:10.1103/PhysRevLett.110.236601

Realization of a double-barrier resonant tunneling diode for cavity polaritons

H. S. Nguyen
, D. Vishnevsky
, C. Sturm
, D. Tanese
, D. Solnyshkov
, E. Galopin
, A. Lemaître
, I. Sagnes
, A. Amo
, G. Malpuech
, J. Bloch

École Polytechnique

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the realization of a double-barrier resonant tunneling diode for cavity polaritons, by lateral patterning of a one-dimensional cavity. Sharp transmission resonances are demonstrated when sending a polariton flow onto the device. We show that a nonresonant beam can be used as an optical gate and can control the device transmission. Finally, we evidence distortion of the transmission profile when going to the high-density regime, signature of polariton-polariton interactions.

Original language	English
Article number	236601
Journal	Physical Review Letters
Volume	110
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevLett.110.236601
Publication status	Published - 3 Jun 2013

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10.1103/PhysRevLett.110.236601

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abstract = "We report on the realization of a double-barrier resonant tunneling diode for cavity polaritons, by lateral patterning of a one-dimensional cavity. Sharp transmission resonances are demonstrated when sending a polariton flow onto the device. We show that a nonresonant beam can be used as an optical gate and can control the device transmission. Finally, we evidence distortion of the transmission profile when going to the high-density regime, signature of polariton-polariton interactions.",

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AU - Nguyen, H. S.

AU - Vishnevsky, D.

AU - Sturm, C.

AU - Tanese, D.

AU - Solnyshkov, D.

AU - Galopin, E.

AU - Lemaître, A.

AU - Sagnes, I.

AU - Amo, A.

AU - Malpuech, G.

AU - Bloch, J.

PY - 2013/6/3

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N2 - We report on the realization of a double-barrier resonant tunneling diode for cavity polaritons, by lateral patterning of a one-dimensional cavity. Sharp transmission resonances are demonstrated when sending a polariton flow onto the device. We show that a nonresonant beam can be used as an optical gate and can control the device transmission. Finally, we evidence distortion of the transmission profile when going to the high-density regime, signature of polariton-polariton interactions.

AB - We report on the realization of a double-barrier resonant tunneling diode for cavity polaritons, by lateral patterning of a one-dimensional cavity. Sharp transmission resonances are demonstrated when sending a polariton flow onto the device. We show that a nonresonant beam can be used as an optical gate and can control the device transmission. Finally, we evidence distortion of the transmission profile when going to the high-density regime, signature of polariton-polariton interactions.

UR - https://www.scopus.com/pages/publications/84878725993

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DO - 10.1103/PhysRevLett.110.236601

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JO - Physical Review Letters

JF - Physical Review Letters

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ER -

Realization of a double-barrier resonant tunneling diode for cavity polaritons

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