Realization of Si1-x-yGexCy Si heterostructures by pulsed laser induced epitaxy of C+ implanted pseudomorphic SiGe films and of a-SiGeC: H films deposited on Si(100)

J. Boulmer; P. Boucaud; C. Guedj; D. Débarre; D. Bouchier; E. Finkman; S. Prawer; K. Nugent; A. Desmur-Larré; C. Godet; P. Roca i Cabarrocas

doi:10.1016/0022-0248(95)00362-2

Realization of Si_1-x-yGe_xC_y Si heterostructures by pulsed laser induced epitaxy of C⁺ implanted pseudomorphic SiGe films and of a-SiGeC: H films deposited on Si(100)

J. Boulmer, P. Boucaud, C. Guedj, D. Débarre, D. Bouchier, E. Finkman, S. Prawer, K. Nugent, A. Desmur-Larré, C. Godet, P. Roca i Cabarrocas

Research output: Contribution to journal › Article › peer-review

Abstract

Si_1-x-yGe_xC_y Si heterostructures are realized by pulsed laser induced epitaxy (PLIE) from C⁺ implanted pseudomorphic Si_0.84Ge_0.16 films and from hydrogenated amorphous SiGeC films deposited on Si(100). The laser treated samples are examined by electron channelling, energy dispersive X-ray analysis, Rutherford backscattering spectroscopy and ion channelling, X-ray diffraction, secondary ion mass spectrometry, and infrared and Raman spectroscopy. We show that PLIE occurs when the laser fluence exceeds a threshold for which the liquid-solid interface reaches the crystalline substrate at each laser pulse. Above this threshold, germanium and carbon atoms diffuse inside the melted layer, and carbon incorporation in substitutional sites increases with the laser fluence and the number of pulses. The resulting SiGeC layers are pseudomorphic.

Original language	English
Pages (from-to)	436-441
Number of pages	6
Journal	Journal of Crystal Growth
Volume	157
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(95)00362-2
Publication status	Published - 2 Dec 1995

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Boulmer, J., Boucaud, P., Guedj, C., Débarre, D., Bouchier, D., Finkman, E., Prawer, S., Nugent, K., Desmur-Larré, A., Godet, C., & Roca i Cabarrocas, P. (1995). Realization of Si_1-x-yGe_xC_y Si heterostructures by pulsed laser induced epitaxy of C⁺ implanted pseudomorphic SiGe films and of a-SiGeC: H films deposited on Si(100). Journal of Crystal Growth, 157(1-4), 436-441. https://doi.org/10.1016/0022-0248(95)00362-2

@article{cf25013e4a874432a5776c6058dcecfb,

title = "Realization of Si1-x-yGexCy Si heterostructures by pulsed laser induced epitaxy of C+ implanted pseudomorphic SiGe films and of a-SiGeC: H films deposited on Si(100)",

abstract = "Si1-x-yGexCy Si heterostructures are realized by pulsed laser induced epitaxy (PLIE) from C+ implanted pseudomorphic Si0.84Ge0.16 films and from hydrogenated amorphous SiGeC films deposited on Si(100). The laser treated samples are examined by electron channelling, energy dispersive X-ray analysis, Rutherford backscattering spectroscopy and ion channelling, X-ray diffraction, secondary ion mass spectrometry, and infrared and Raman spectroscopy. We show that PLIE occurs when the laser fluence exceeds a threshold for which the liquid-solid interface reaches the crystalline substrate at each laser pulse. Above this threshold, germanium and carbon atoms diffuse inside the melted layer, and carbon incorporation in substitutional sites increases with the laser fluence and the number of pulses. The resulting SiGeC layers are pseudomorphic.",

author = "J. Boulmer and P. Boucaud and C. Guedj and D. D{\'e}barre and D. Bouchier and E. Finkman and S. Prawer and K. Nugent and A. Desmur-Larr{\'e} and C. Godet and \{Roca i Cabarrocas\}, P.",

year = "1995",

month = dec,

day = "2",

doi = "10.1016/0022-0248(95)00362-2",

language = "English",

volume = "157",

pages = "436--441",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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Boulmer, J, Boucaud, P, Guedj, C, Débarre, D, Bouchier, D, Finkman, E, Prawer, S, Nugent, K, Desmur-Larré, A, Godet, C & Roca i Cabarrocas, P 1995, 'Realization of Si_1-x-yGe_xC_y Si heterostructures by pulsed laser induced epitaxy of C⁺ implanted pseudomorphic SiGe films and of a-SiGeC: H films deposited on Si(100)', Journal of Crystal Growth, vol. 157, no. 1-4, pp. 436-441. https://doi.org/10.1016/0022-0248(95)00362-2

TY - JOUR

T1 - Realization of Si1-x-yGexCy Si heterostructures by pulsed laser induced epitaxy of C+ implanted pseudomorphic SiGe films and of a-SiGeC

T2 - H films deposited on Si(100)

AU - Boulmer, J.

AU - Boucaud, P.

AU - Guedj, C.

AU - Débarre, D.

AU - Bouchier, D.

AU - Finkman, E.

AU - Prawer, S.

AU - Nugent, K.

AU - Desmur-Larré, A.

AU - Godet, C.

AU - Roca i Cabarrocas, P.

PY - 1995/12/2

Y1 - 1995/12/2

N2 - Si1-x-yGexCy Si heterostructures are realized by pulsed laser induced epitaxy (PLIE) from C+ implanted pseudomorphic Si0.84Ge0.16 films and from hydrogenated amorphous SiGeC films deposited on Si(100). The laser treated samples are examined by electron channelling, energy dispersive X-ray analysis, Rutherford backscattering spectroscopy and ion channelling, X-ray diffraction, secondary ion mass spectrometry, and infrared and Raman spectroscopy. We show that PLIE occurs when the laser fluence exceeds a threshold for which the liquid-solid interface reaches the crystalline substrate at each laser pulse. Above this threshold, germanium and carbon atoms diffuse inside the melted layer, and carbon incorporation in substitutional sites increases with the laser fluence and the number of pulses. The resulting SiGeC layers are pseudomorphic.

AB - Si1-x-yGexCy Si heterostructures are realized by pulsed laser induced epitaxy (PLIE) from C+ implanted pseudomorphic Si0.84Ge0.16 films and from hydrogenated amorphous SiGeC films deposited on Si(100). The laser treated samples are examined by electron channelling, energy dispersive X-ray analysis, Rutherford backscattering spectroscopy and ion channelling, X-ray diffraction, secondary ion mass spectrometry, and infrared and Raman spectroscopy. We show that PLIE occurs when the laser fluence exceeds a threshold for which the liquid-solid interface reaches the crystalline substrate at each laser pulse. Above this threshold, germanium and carbon atoms diffuse inside the melted layer, and carbon incorporation in substitutional sites increases with the laser fluence and the number of pulses. The resulting SiGeC layers are pseudomorphic.

U2 - 10.1016/0022-0248(95)00362-2

DO - 10.1016/0022-0248(95)00362-2

M3 - Article

AN - SCOPUS:0029633695

SN - 0022-0248

VL - 157

SP - 436

EP - 441

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Realization of Si1-x-yGexCy Si heterostructures by pulsed laser induced epitaxy of C+ implanted pseudomorphic SiGe films and of a-SiGeC: H films deposited on Si(100)

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Realization of Si_1-x-yGe_xC_y Si heterostructures by pulsed laser induced epitaxy of C⁺ implanted pseudomorphic SiGe films and of a-SiGeC: H films deposited on Si(100)