Realization of Si1-x-yGexCy/si heterostructures by pulsed laser induced epitaxy of C+ implanted pseudomorphic SiGe films and of a-SiGec:H films deposited on Si(100)

J. Boulmer; A. Desmur-Larré; C. Guedi; D. Débarre; P. Boucaud; F. H. Julien; E. Finkman; K. Nugent; R. Laval; J. B. Ozenne; H. Yang; D. Bouchier; C. Godet; P. RocaCabarrocas; G. Calvarin; C. Clerc

doi:10.1117/12.206273

Realization of Si_1-x-yGe_xC_y/si heterostructures by pulsed laser induced epitaxy of C⁺ implanted pseudomorphic SiGe films and of a-SiGec:H films deposited on Si(100)

J. Boulmer
, A. Desmur-Larré
, C. Guedi
, D. Débarre
, P. Boucaud
, F. H. Julien
, E. Finkman
, K. Nugent
, R. Laval
, J. B. Ozenne
, H. Yang
, D. Bouchier
, C. Godet
, P. RocaCabarrocas
, G. Calvarin
, C. Clerc

Institut d'Electroniaue Fondamentale (URA 22 du CNRS)
Université Paris-Saclay
Pixel International
Department of Electrical Engineering
Technion - Israel Institute of Technology
University of Melbourne
Institut polytechnique de Paris
SPMS, UMR 8580 CNRS-Ecole Centrale Paris, Grande Voie des Vignes
Centre national de la recherche scientifique

Research output: Contribution to journal › Conference article › peer-review

7 Citations (Scopus)

Abstract

Si_1-x-yGe_x/Si heterostructures are realized by pulsed laser induced epitaxy (PLIE) from C⁺ implanted pseudomorphic Si_0.84 Ge_0.16 film and from hydrogenated amorphous SiGeC films deposited on Si(100). The laser treated samples are examined by electron channelling, energy dispersive X-ray analysis, Rutherford backscattering spectroscopy, X-ray diffraction and Raman spectroscopy. First results show that laser induced epitaxy is effective, provided that laser fluence exceeds a threshold for which the melted depth is larger than the initial SiGeC layer. In addition, carbon incorporation in substitutional sites is demonstrated.

Original language	English
Pages (from-to)	362-372
Number of pages	11
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2403
DOIs	https://doi.org/10.1117/12.206273
Publication status	Published - 10 Apr 1995
Event	Laser-Induced Thin Film Processing 1995 - San Jose, United States Duration: 1 Feb 1995 → 28 Feb 1995

Keywords

ECP
EDX
Epitaxy
IV-IV alloy
Laser
Laser annealing
Laser melting
RBS
Raman spectroscopy
SiGeC
X-ray diffraction

Access to Document

10.1117/12.206273

Cite this

Boulmer, J., Desmur-Larré, A., Guedi, C., Débarre, D., Boucaud, P., Julien, F. H., Finkman, E., Nugent, K., Laval, R., Ozenne, J. B., Yang, H., Bouchier, D., Godet, C., RocaCabarrocas, P., Calvarin, G., & Clerc, C. (1995). Realization of Si_1-x-yGe_xC_y/si heterostructures by pulsed laser induced epitaxy of C⁺ implanted pseudomorphic SiGe films and of a-SiGec:H films deposited on Si(100). Proceedings of SPIE - The International Society for Optical Engineering, 2403, 362-372. https://doi.org/10.1117/12.206273

@article{050f6f1d4de44a4f8d9d7a669724f362,

title = "Realization of Si1-x-yGexCy/si heterostructures by pulsed laser induced epitaxy of C+ implanted pseudomorphic SiGe films and of a-SiGec:H films deposited on Si(100)",

abstract = "Si1-x-yGex/Si heterostructures are realized by pulsed laser induced epitaxy (PLIE) from C+ implanted pseudomorphic Si0.84 Ge0.16 film and from hydrogenated amorphous SiGeC films deposited on Si(100). The laser treated samples are examined by electron channelling, energy dispersive X-ray analysis, Rutherford backscattering spectroscopy, X-ray diffraction and Raman spectroscopy. First results show that laser induced epitaxy is effective, provided that laser fluence exceeds a threshold for which the melted depth is larger than the initial SiGeC layer. In addition, carbon incorporation in substitutional sites is demonstrated.",

keywords = "ECP, EDX, Epitaxy, IV-IV alloy, Laser, Laser annealing, Laser melting, RBS, Raman spectroscopy, SiGeC, X-ray diffraction",

author = "J. Boulmer and A. Desmur-Larr{\'e} and C. Guedi and D. D{\'e}barre and P. Boucaud and Julien, \{F. H.\} and E. Finkman and K. Nugent and R. Laval and Ozenne, \{J. B.\} and H. Yang and D. Bouchier and C. Godet and P. RocaCabarrocas and G. Calvarin and C. Clerc",

year = "1995",

month = apr,

day = "10",

doi = "10.1117/12.206273",

language = "English",

volume = "2403",

pages = "362--372",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

}

Boulmer, J, Desmur-Larré, A, Guedi, C, Débarre, D, Boucaud, P, Julien, FH, Finkman, E, Nugent, K, Laval, R, Ozenne, JB, Yang, H, Bouchier, D, Godet, C, RocaCabarrocas, P, Calvarin, G & Clerc, C 1995, 'Realization of Si_1-x-yGe_xC_y/si heterostructures by pulsed laser induced epitaxy of C⁺ implanted pseudomorphic SiGe films and of a-SiGec:H films deposited on Si(100)', Proceedings of SPIE - The International Society for Optical Engineering, vol. 2403, pp. 362-372. https://doi.org/10.1117/12.206273

Realization of Si_1-x-yGe_xC_y/si heterostructures by pulsed laser induced epitaxy of C⁺ implanted pseudomorphic SiGe films and of a-SiGec:H films deposited on Si(100). / Boulmer, J.; Desmur-Larré, A.; Guedi, C. et al.
In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 2403, 10.04.1995, p. 362-372.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Realization of Si1-x-yGexCy/si heterostructures by pulsed laser induced epitaxy of C+ implanted pseudomorphic SiGe films and of a-SiGec:H films deposited on Si(100)

AU - Boulmer, J.

AU - Desmur-Larré, A.

AU - Guedi, C.

AU - Débarre, D.

AU - Boucaud, P.

AU - Julien, F. H.

AU - Finkman, E.

AU - Nugent, K.

AU - Laval, R.

AU - Ozenne, J. B.

AU - Yang, H.

AU - Bouchier, D.

AU - Godet, C.

AU - RocaCabarrocas, P.

AU - Calvarin, G.

AU - Clerc, C.

PY - 1995/4/10

Y1 - 1995/4/10

N2 - Si1-x-yGex/Si heterostructures are realized by pulsed laser induced epitaxy (PLIE) from C+ implanted pseudomorphic Si0.84 Ge0.16 film and from hydrogenated amorphous SiGeC films deposited on Si(100). The laser treated samples are examined by electron channelling, energy dispersive X-ray analysis, Rutherford backscattering spectroscopy, X-ray diffraction and Raman spectroscopy. First results show that laser induced epitaxy is effective, provided that laser fluence exceeds a threshold for which the melted depth is larger than the initial SiGeC layer. In addition, carbon incorporation in substitutional sites is demonstrated.

AB - Si1-x-yGex/Si heterostructures are realized by pulsed laser induced epitaxy (PLIE) from C+ implanted pseudomorphic Si0.84 Ge0.16 film and from hydrogenated amorphous SiGeC films deposited on Si(100). The laser treated samples are examined by electron channelling, energy dispersive X-ray analysis, Rutherford backscattering spectroscopy, X-ray diffraction and Raman spectroscopy. First results show that laser induced epitaxy is effective, provided that laser fluence exceeds a threshold for which the melted depth is larger than the initial SiGeC layer. In addition, carbon incorporation in substitutional sites is demonstrated.

KW - ECP

KW - EDX

KW - Epitaxy

KW - IV-IV alloy

KW - Laser

KW - Laser annealing

KW - Laser melting

KW - RBS

KW - Raman spectroscopy

KW - SiGeC

KW - X-ray diffraction

U2 - 10.1117/12.206273

DO - 10.1117/12.206273

M3 - Conference article

AN - SCOPUS:0029213639

SN - 0277-786X

VL - 2403

SP - 362

EP - 372

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Laser-Induced Thin Film Processing 1995

Y2 - 1 February 1995 through 28 February 1995