Recent advances in germanium emission [invited]

P. Boucaud; M. El Kurdi; A. Ghrib; M. Prost; M. De Kersauson; S. Sauvage; F. Aniel; X. Checoury; G. Beaudoin; L. Largeau; I. Sagnes; G. Ndong; M. Chaigneau; R. Ossikovski

doi:10.1364/PRJ.1.000102

Recent advances in germanium emission [invited]

P. Boucaud
, M. El Kurdi
, A. Ghrib
, M. Prost
, M. De Kersauson
, S. Sauvage
, F. Aniel
, X. Checoury
, G. Beaudoin
, L. Largeau
, I. Sagnes
, G. Ndong
, M. Chaigneau
, R. Ossikovski

Centre national de la recherche scientifique
STMicroelectronics SA, France
Centre de Nanosciences et de Nanotechnologies
Institut polytechnique de Paris

Research output: Contribution to journal › Article › peer-review

Abstract

The optical properties of germanium can be tailored by combining strain engineering and n-type doping. In this paper, we review the recent progress that has been reported in the study of germanium light emitters for silicon photonics. We discuss the different approaches that were implemented for strain engineering and the issues associated with n-type doping. We show that compact germanium emitters can be obtained by processing germanium into tensile-strained microdisks.

Original language	English
Pages (from-to)	102-109
Number of pages	8
Journal	Photonics Research
Volume	1
Issue number	3
DOIs	https://doi.org/10.1364/PRJ.1.000102
Publication status	Published - 1 Jan 2013

Keywords

Optoelectronics
Semiconductor materials
Spectroscopy, fluorescence and luminescence

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10.1364/PRJ.1.000102

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title = "Recent advances in germanium emission [invited]",

abstract = "The optical properties of germanium can be tailored by combining strain engineering and n-type doping. In this paper, we review the recent progress that has been reported in the study of germanium light emitters for silicon photonics. We discuss the different approaches that were implemented for strain engineering and the issues associated with n-type doping. We show that compact germanium emitters can be obtained by processing germanium into tensile-strained microdisks.",

keywords = "Optoelectronics, Semiconductor materials, Spectroscopy, fluorescence and luminescence",

author = "P. Boucaud and \{El Kurdi\}, M. and A. Ghrib and M. Prost and \{De Kersauson\}, M. and S. Sauvage and F. Aniel and X. Checoury and G. Beaudoin and L. Largeau and I. Sagnes and G. Ndong and M. Chaigneau and R. Ossikovski",

note = "Publisher Copyright: {\textcopyright} 2013 Chinese Laser Press.",

year = "2013",

month = jan,

day = "1",

doi = "10.1364/PRJ.1.000102",

language = "English",

volume = "1",

pages = "102--109",

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TY - JOUR

T1 - Recent advances in germanium emission [invited]

AU - Boucaud, P.

AU - El Kurdi, M.

AU - Ghrib, A.

AU - Prost, M.

AU - De Kersauson, M.

AU - Sauvage, S.

AU - Aniel, F.

AU - Checoury, X.

AU - Beaudoin, G.

AU - Largeau, L.

AU - Sagnes, I.

AU - Ndong, G.

AU - Chaigneau, M.

AU - Ossikovski, R.

PY - 2013/1/1

Y1 - 2013/1/1

N2 - The optical properties of germanium can be tailored by combining strain engineering and n-type doping. In this paper, we review the recent progress that has been reported in the study of germanium light emitters for silicon photonics. We discuss the different approaches that were implemented for strain engineering and the issues associated with n-type doping. We show that compact germanium emitters can be obtained by processing germanium into tensile-strained microdisks.

AB - The optical properties of germanium can be tailored by combining strain engineering and n-type doping. In this paper, we review the recent progress that has been reported in the study of germanium light emitters for silicon photonics. We discuss the different approaches that were implemented for strain engineering and the issues associated with n-type doping. We show that compact germanium emitters can be obtained by processing germanium into tensile-strained microdisks.

KW - Optoelectronics

KW - Semiconductor materials

KW - Spectroscopy, fluorescence and luminescence

U2 - 10.1364/PRJ.1.000102

DO - 10.1364/PRJ.1.000102

M3 - Article

AN - SCOPUS:84921260625

SN - 2327-9125

VL - 1

SP - 102

EP - 109

JO - Photonics Research

JF - Photonics Research

IS - 3

ER -

Recent advances in germanium emission [invited]

Abstract

Keywords

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