Abstract
The subpicosecond time-resolved X-ray diffraction tool which is available for the study of atomic motion in such timescale is demonstrated. The results of the study of the phase transition of an InSb surface induced by strong laser pulses are presented. Extensive all-visible pump-probe experiments have indicated that the promotion of a dense electron-hole plasma may produce melting in a timescale too short to be understood as usual thermal melting. Numerical simulations show that atoms may move by 1 angstrom in 200 fs in semiconductors. Such ultrafast atomic displacements can be easily observable by X-ray diffraction once the time resolution in such experiments can reach 100 fs.
| Original language | English |
|---|---|
| Pages | 152-153 |
| Number of pages | 2 |
| Publication status | Published - 1 Jan 1999 |
| Event | Proceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99) - Baltimore, MD, USA Duration: 23 May 1999 → 28 May 1999 |
Conference
| Conference | Proceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99) |
|---|---|
| City | Baltimore, MD, USA |
| Period | 23/05/99 → 28/05/99 |
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