Recent results on SIS mixers at LETI (Grenoble) and ENS (Paris) with Nb/Ox/PbIn and NbN/Ox/PbIn junctions

A. Regent; I. Zaquine; G. Matheron; J. C. Villegier; J. C. Pernot; C. Letrou; D. Crete; P. Encrenaz

doi:10.1016/0378-4363(85)90634-5

Recent results on SIS mixers at LETI (Grenoble) and ENS (Paris) with Nb/Ox/PbIn and NbN/Ox/PbIn junctions

A. Regent
, I. Zaquine
, G. Matheron
, J. C. Villegier
, J. C. Pernot
, C. Letrou
, D. Crete
, P. Encrenaz

Research output: Contribution to journal › Article › peer-review

Abstract

Superconducting thin film tunnel junctions with a niobium or niobium nitride base electrode and lead-indium counter electrode have been made and tested with success at LETI (Grenoble) and ENS (Paris) at 35 GHz in mixing experiments. NbN junctions gave double side band mixer noise temperatures of about 70 K with 7 dB conversion loss. NbN is expected to be a very good material for applications at frequencies above 115 GHz due to its large energy gap, compared to the usual tin or lead alloys.

Original language	English
Pages (from-to)	511-515
Number of pages	5
Journal	Physica B+C
Volume	129
Issue number	1-3
DOIs	https://doi.org/10.1016/0378-4363(85)90634-5
Publication status	Published - 1 Jan 1985

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title = "Recent results on SIS mixers at LETI (Grenoble) and ENS (Paris) with Nb/Ox/PbIn and NbN/Ox/PbIn junctions",

abstract = "Superconducting thin film tunnel junctions with a niobium or niobium nitride base electrode and lead-indium counter electrode have been made and tested with success at LETI (Grenoble) and ENS (Paris) at 35 GHz in mixing experiments. NbN junctions gave double side band mixer noise temperatures of about 70 K with 7 dB conversion loss. NbN is expected to be a very good material for applications at frequencies above 115 GHz due to its large energy gap, compared to the usual tin or lead alloys.",

author = "A. Regent and I. Zaquine and G. Matheron and Villegier, \{J. C.\} and Pernot, \{J. C.\} and C. Letrou and D. Crete and P. Encrenaz",

year = "1985",

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doi = "10.1016/0378-4363(85)90634-5",

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T1 - Recent results on SIS mixers at LETI (Grenoble) and ENS (Paris) with Nb/Ox/PbIn and NbN/Ox/PbIn junctions

AU - Regent, A.

AU - Zaquine, I.

AU - Matheron, G.

AU - Villegier, J. C.

AU - Pernot, J. C.

AU - Letrou, C.

AU - Crete, D.

AU - Encrenaz, P.

PY - 1985/1/1

Y1 - 1985/1/1

N2 - Superconducting thin film tunnel junctions with a niobium or niobium nitride base electrode and lead-indium counter electrode have been made and tested with success at LETI (Grenoble) and ENS (Paris) at 35 GHz in mixing experiments. NbN junctions gave double side band mixer noise temperatures of about 70 K with 7 dB conversion loss. NbN is expected to be a very good material for applications at frequencies above 115 GHz due to its large energy gap, compared to the usual tin or lead alloys.

AB - Superconducting thin film tunnel junctions with a niobium or niobium nitride base electrode and lead-indium counter electrode have been made and tested with success at LETI (Grenoble) and ENS (Paris) at 35 GHz in mixing experiments. NbN junctions gave double side band mixer noise temperatures of about 70 K with 7 dB conversion loss. NbN is expected to be a very good material for applications at frequencies above 115 GHz due to its large energy gap, compared to the usual tin or lead alloys.

U2 - 10.1016/0378-4363(85)90634-5

DO - 10.1016/0378-4363(85)90634-5

M3 - Article

AN - SCOPUS:0021391316

SN - 0378-4363

VL - 129

SP - 511

EP - 515

JO - Physica B+C

JF - Physica B+C

IS - 1-3

ER -

Recent results on SIS mixers at LETI (Grenoble) and ENS (Paris) with Nb/Ox/PbIn and NbN/Ox/PbIn junctions

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