Reconstruction of the (110) surfaces for III-V semiconductors; Five systems involving In or Sb

Roger Chang; William A. Goddard

doi:10.1016/0039-6028(84)90103-1

Reconstruction of the (110) surfaces for III-V semiconductors; Five systems involving In or Sb

Roger Chang
, William A. Goddard

California Institute of Technology

Research output: Contribution to journal › Article › peer-review

Abstract

We report reconstruction geometries for the (110) surfaces of InSb, InAs, InP, GaSb, and AISb based on theoretical calculations on cluster models. The surface strains are in excellent accord with experiment and the trends in surface strains fit well with the Duke linear lattice constant correlation. Surface reconstruction energies are in the range of 1.1 to 1.3 eV. We also report the geometries and energies for charged surface states.

Original language	English
Pages (from-to)	311-320
Number of pages	10
Journal	Surface Science
Volume	144
Issue number	2-3
DOIs	https://doi.org/10.1016/0039-6028(84)90103-1
Publication status	Published - 1 Sept 1984
Externally published	Yes

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10.1016/0039-6028(84)90103-1

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title = "Reconstruction of the (110) surfaces for III-V semiconductors; Five systems involving In or Sb",

abstract = "We report reconstruction geometries for the (110) surfaces of InSb, InAs, InP, GaSb, and AISb based on theoretical calculations on cluster models. The surface strains are in excellent accord with experiment and the trends in surface strains fit well with the Duke linear lattice constant correlation. Surface reconstruction energies are in the range of 1.1 to 1.3 eV. We also report the geometries and energies for charged surface states.",

author = "Roger Chang and Goddard, \{William A.\}",

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AU - Chang, Roger

AU - Goddard, William A.

PY - 1984/9/1

Y1 - 1984/9/1

N2 - We report reconstruction geometries for the (110) surfaces of InSb, InAs, InP, GaSb, and AISb based on theoretical calculations on cluster models. The surface strains are in excellent accord with experiment and the trends in surface strains fit well with the Duke linear lattice constant correlation. Surface reconstruction energies are in the range of 1.1 to 1.3 eV. We also report the geometries and energies for charged surface states.

AB - We report reconstruction geometries for the (110) surfaces of InSb, InAs, InP, GaSb, and AISb based on theoretical calculations on cluster models. The surface strains are in excellent accord with experiment and the trends in surface strains fit well with the Duke linear lattice constant correlation. Surface reconstruction energies are in the range of 1.1 to 1.3 eV. We also report the geometries and energies for charged surface states.

UR - https://www.scopus.com/pages/publications/0001646346

U2 - 10.1016/0039-6028(84)90103-1

DO - 10.1016/0039-6028(84)90103-1

M3 - Article

AN - SCOPUS:0001646346

SN - 0039-6028

VL - 144

SP - 311

EP - 320

JO - Surface Science

JF - Surface Science

IS - 2-3

ER -

Reconstruction of the (110) surfaces for III-V semiconductors; Five systems involving In or Sb

Abstract

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